Citation: Li Kunwei, Hao Huanhuan, Liu Jingbing, Wang Hao. Research Progress in Raman Spectroscopy Characterization of Graphene Materials[J]. Chemistry, ;2017, 80(3): 236-240, 245. shu

Research Progress in Raman Spectroscopy Characterization of Graphene Materials

Li Kunwei ¹ ,
Hao Huanhuan ² ,
Liu Jingbing ^2,*,, ,
Wang Hao ²

1.
China National Institute of Standardization, Beijing 100142
2.
The College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124

Corresponding author: Liu Jingbing, liujingbing@bjut.edu.cn
Received Date: 1 July 2016
Accepted Date: 14 September 2016

Figures(9)

Graphene have good application prospect in nano-electronic devices for its unique normalize electronic valence bond structure. Raman spectroscopy, as a sensitive and convenient technology, has been used for characterizing the structures and properties of graphene successfully. This paper mainly introduces the Raman spectra research on graphene with different doping state or deposited on different substrates. Although the G band and 2D band of Raman spectra has deviation in different degree on various substrates, by observing Raman spectroscopies of graphene on indium tin oxide, sapphire, and glass substrate, the conclusion that the intensity of 2D band can determine the layer of graphene is still applicable. Doping can change the charged state of graphene and make graphene show hole type (p) or electronic (n) doped features. The doping type of graphene can be described qualitatively, as well as the carrier concentration of graphene can be quantitatively determined by analyzing the changes of graphene Raman spectroscopy.
- Graphene,
- Substrate,
- Doping
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