Citation: XIA Ao, HUANG Jian-Feng, TAN Guo-Qiang, YIN Jun. Preparation and Characterization of Bi₂Ti₂O₇ Thin Films from Self-Assembled Monolayer Technique[J]. Chinese Journal of Inorganic Chemistry, ;2013, 29(7): 1545-1550. doi: 10.3969/j.issn.1001-4861.2013.00.253 shu

Preparation and Characterization of Bi₂Ti₂O₇ Thin Films from Self-Assembled Monolayer Technique

1.
Key Laboratory of Auxiliary Chemistry and Technology for Chemical Industry, Ministry of Education of China, Shaanxi University of Science and Technology, Weiyang District, Xi'an 710021, China

Received Date: 24 November 2012
Available Online: 21 March 2013
Fund Project: 国家青年科学基金(No.51002092) (No.51002092)陕西省自然科学基金(No.2010JM6013)资助项目。 (No.2010JM6013)

Bi₂Ti₂O₇ thin films were prepared on the functionalized octadecyl-trichloro-silane (OTS)-covered fluorine-doped SnO₂ (FTO) substrates by self-assembled monolayer (SAM) technique using Bi(NO₃)₃·5H₂O and Ti(OC₄H₉)₄ as raw materials. The test of the hydrophilicity of the substrate surface indicates that UV irradiation turns the surface of OTS-SAM film from hydrophobicity to hydrophilicity and realizes the functionalization. The composition, microstructure and microtopography of Bi₂Ti₂O₇ thin films were characterized by X-ray Diffraction (XRD), Energy Dispersive X-ray Spectrometry (EDS), Scanning Electron Microscopy (SEM) and Atomic Force Microscope (AFM). The results indicate that the as-prepared Bi₂Ti₂O₇ thin films are homogeneous and dense when the concentration of the deposited solution is 0.02 mol·L^-1. The dielectric constant is 153 at 100 kHz and the dielectric loss is 0.089 for a 0.4 μm-thick film annealed at 560 ℃ for 1 h.
- Bi₂Ti₂O₇;thin film;self-assembled monolayer film;dielectric properties
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沈阳化工大学材料科学与工程学院沈阳 110142

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通讯作者: 陈斌, bchen63@163.com

Preparation and Characterization of Bi₂Ti₂O₇ Thin Films from Self-Assembled Monolayer Technique