Citation: SUN Xia-Wei, TAN Jin, LI Cong-Ming, LEI Ting, MENG Xiao-Kang, YAN Wei, ZHANG Wei, FENG Shan. Doping Effects of Sb, Bi, Zr and Si on the Properties of YAG：Ce Phosphor[J]. Chinese Journal of Inorganic Chemistry, ;2013, 29(9): 1863-1869. doi: 10.3969/j.issn.1001-4861.2013.00.241 shu

Doping Effects of Sb, Bi, Zr and Si on the Properties of YAG：Ce Phosphor

SUN Xia-Wei ¹ ,
TAN Jin ^1,2 ,
LI Cong-Ming ¹ ,
LEI Ting ¹ ,
MENG Xiao-Kang ¹ ,
YAN Wei ¹ ,
ZHANG Wei ¹ ,
FENG Shan ¹

1.
1 Faculty of Material Science and Chemistry, China University of Geosciences, Wuhan 430074, China;

Received Date: 29 January 2013
Available Online: 7 April 2013
Fund Project: 国家自然科学基金(No.40643018)资助项目。 (No.40643018)

The Sb³⁺, Bi³⁺, Zr⁴⁺ and Si⁴⁺ doped YAG:Ce yellow phosphors were synthesized by high temperature solid-state method. The doping effect and the related mechanism of Sb³⁺, Bi³⁺, Zr⁴⁺ and Si⁴⁺ on the luminescence intensity of YAG:Ce were studied. The results show that the luminescence intensity firstly increases with the increases of the Sb³⁺, Bi³⁺, Zr⁴⁺ and Si⁴⁺ concentration, then decreases. The energy transfer from Sb³⁺ and Bi³⁺ to Ce³⁺ took the mechanism of the multipolar interactions, which leads the improvements of the emission intensity about 35.5% at 0.5 mmol for Sb³⁺ and 44.8% at 0.1 mmol for Bi³⁺, respectively. The additions of Zr⁴⁺ and Si⁴⁺ promote further reduction of Ce⁴⁺ to Ce³⁺, owing to spontaneous charge compensation. The highest emission intensity is obtained at the concentrations of Zr⁴⁺ and Si⁴⁺ of 0.3 mmol and 7 mmol, which is increased by 27.4% and 31.2%, respectively. With the doping of Sb³⁺, Bi³⁺, Zr⁴⁺ and Si⁴⁺ elements, the growth of phosphor particle is improved, resulting in the enhancement of phosphors emission.
- YAG：Ce;phosphors;Co-deped;energy transmission;oxygen vacancy
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