NixCo3-xO4表面修饰对CdSe/TiO2纳米管阵列光电化学氧化水活性的影响

许贞 李娟 李新军

引用本文: 许贞, 李娟, 李新军. NixCo3-xO4表面修饰对CdSe/TiO2纳米管阵列光电化学氧化水活性的影响[J]. 无机化学学报, 2013, 29(3): 429-436. doi: 10.3969/j.issn.1001-4861.2013.00.051 shu
Citation:  XU Zhen, LI Juan, LI Xinjun. Effect of NixCo3-xO4 Modification for CdSe/TiO2 Nanotube Arrays on Activity of Photoelectrochemical Oxidation of Water[J]. Chinese Journal of Inorganic Chemistry, 2013, 29(3): 429-436. doi: 10.3969/j.issn.1001-4861.2013.00.051 shu

NixCo3-xO4表面修饰对CdSe/TiO2纳米管阵列光电化学氧化水活性的影响

  • 基金项目:

    国家自然科学基金(No.51172233) (No.51172233)

    国家重点基础研究发展计划项目(973)(2009CB220002)资助项目。 (973)(2009CB220002)

摘要: 利用氨挥发诱导法在CdSe/TiO2纳米管阵列表面负载一层NixCo3-xO4。采用SEM、XRD、XPS、UV-Vis对样品进行表征,通过线性扫描伏安法测定光阳极的释氧电势来评价其光电水氧化活性。结果表明:表面NixCo3-xO4是尖晶石结构;相对于CdSe/TiO2纳米管阵列光阳极,NixCo3-xO4/CdSe/TiO2光阳极能将光电氧化水的过电势降低430 mV。Ni离子的引入使得NixCo3-xO4表面富含三价阳离子(Ni3+,Co3+),从而促进CdSe/TiO2光阳极光电水氧化的进行。

English

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  • 收稿日期:  2012-06-21
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