English

Charge Accumulation Behavior in Quantum Dot Light-Emitting Diodes

• Cheng Wang ^{1, 2,} ,
• Chi Zhang ^1, ,
• Ruifeng Li ^3, ,
• Qi Chen ^{1, 4, ,} ,
• Lei Qian ^3, ,
• Liwei Chen ^{1, 5,}

• 1.

  i-Lab, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu Province, China

• 2.

  School of Physical Science and Technology, Shanghai Tech University, Shanghai 201210, China

• 3.

  Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang Province, China

• 4.

  School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

• 5.

  In-situ Center for Physical Sciences, School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China

Corresponding author: Qi Chen, qchen2011@sinano.ac.cn

• Received Date: 14 April 2021
  Accepted Date: 07 May 2021
  Revised Date: 06 May 2021
  Available Online: 15 August 2022
• Fund Project:

  the Ministry of Science and Technology of China 

  the National Natural Science Foundation of China 

  the National Natural Science Foundation of China 

  the National Natural Science Foundation of China 

  the National Natural Science Foundation of China 

  the National Natural Science Foundation of China 

Abstract: Quantum dot light-emitting diodes (QLEDs) constitute the next-generation display technology because of their wide color gamut, narrow emission spectrum, adjustable emission wavelength, and ease of solution processability. With the development of novel material and device preparation techniques, the QLEDs not only show an external quantum efficiency (EQE) of more than 20% in red, green, and blue (primary color) devices, but also achieve 100% Rec.2020 (recommendation standard for ultrahigh-resolution display) color gamut coverage. However, the future commercialization of QLEDs is still a challenge. The T95 lifetime (defined as 95% time for the luminance to decay to the initial value L₀ = 1000 cd·m^-2) of red, green, and blue QLED devices is significantly lower than that of commercially available organic light-emitting diodes (OLEDs). This is ascribed to the lacking of understanding and argument to hypothesis of degradation mechanisms. A QLED is a sandwich structure composed of a quantum dot (QD) emitter layer, carrier transport layer, and electrode layer. The QLED works on the principle of electroluminescence: electrons and holes injected from the electrodes on both sides of the device cross multiple interfaces and reach the QD emitter layer to undergo radiation recombination. Generally, the QD emitter layer adopts the structure of a wide-band gap shell wrapped around a narrow band-gap core. Because of the deep valence band maximum, the hole injection barrier is higher, and the hole injection efficiency is reduced. This not only disturbs the injection balance but also leads to the accumulation of interfacial holes, which is one of the important factors affecting the efficiency and life of the device. Past studies have attempted to understand charge accumulation behavior in QLEDs by predicting the interfacial energy band structure, and there are very few reports on the direct measurement of charge accumulation. In this work, we built a charge extraction circuit to investigate the charge accumulation behavior before and after aging in a prototype red QLED. In the fresh red QLEDs, the number of accumulated charges gradually increased with the driving current density and tended to saturate above turn-on current density. In the aged red QLEDs, the accumulated charges increased with a decrease in luminance. Our method to investigate the charge accumulation behavior developed can be extended to various kinds of LEDs, such as OLEDs and perovskite LEDs, thus providing insight into their working mechanism.

Key words:
• Quantum dot light-emitting diodes
•  /  Lifetime
•  /  Injection barrier
•  /  Charge accumulation
•  /  Injection balance

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