Citation: Li Kaining, Zhang Mengxi, Ou Xiaoyu, Li Ruina, Li Qin, Fan Jiajie, Lv Kangle. Strategies for the Fabrication of 2D Carbon Nitride Nanosheets[J]. Acta Physico-Chimica Sinica, ;2021, 37(8): 200801. doi: 10.3866/PKU.WHXB202008010 shu

Strategies for the Fabrication of 2D Carbon Nitride Nanosheets

Li Kaining ¹ ,
Zhang Mengxi ¹ ,
Ou Xiaoyu ¹ ,
Li Ruina ¹ ,
Li Qin ¹ ,
Fan Jiajie ² ,
Lv Kangle ^1,,

1.
Key Laboratory of Catalysis and Energy Materials Chemistry of Ministry of Education, College of Resources and Environmental Science, South-Central University for Nationalities, Wuhan 430074, China
2.
School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China

Corresponding author: Lv Kangle, lvkangle@mail.scuec.edu.cn
Received Date: 4 August 2020
Revised Date: 27 August 2020
Accepted Date: 31 August 2020
Available Online: 7 September 2020
Fund Project: The project was supported by National Natural Science Foundation of China (51672312)National Natural Science Foundation of China 51672312

Layered graphitic carbon nitride (g-C₃N₄) is a typical polymeric semiconductor with an sp² π-conjugated system having great potential in energy conversion, environmental purification, materials science, etc., owing to its unique physicochemical and electrical properties. However, bulk g-C₃N₄ obtained by calcination suffers from a low specific surface area, rapid charge carrier recombination, and poor dispersion in aqueous solutions, which limit its practical applications. Controlling the size of g-C₃N₄ (e.g., preparing g-C₃N₄ nanosheets) can effectively solve the above problems. Compared with the bulk material, g-C₃N₄ nanosheets have a larger specific surface area, richer active sites, and a larger band gap due to the quantum confinement effect. As g-C₃N₄ has a layered structure with strong in-plane C-N covalent bonds and weak van der Waals forces between the layers, g-C₃N₄ nanosheets can be prepared by exfoliating bulk g-C₃N₄. Alternatively, g-C₃N₄ nanosheets can otherwise be obtained through the anisotropic assembly of organic precursors. Nevertheless, some of these methods have various limitations, such as high energy consumption, are time consuming, and have low yield. Accordingly, developing green and cost-effective exfoliation and preparation strategies for g-C₃N₄ nanosheets is necessary. Herein, the research progress of the exfoliation and preparation strategies (including the thermal oxidation etching process, the ultrasound-assisted route, the chemical exfoliation, the mechanical method, and the template method) for two-dimensional C₃N₄ nanosheets are introduced. Their features are systematically analyzed and the perspectives and challenges in the preparation of g-C₃N₄ nanosheets are discussed. This study emphasizes the following: (1) The preparation method of g-C₃N₄ nanosheets should be properly selected according to the practical application needs. Additionally, various strategies (such as chemical method and ultrasonic method) can be combined to exfoliate nanosheets from bulk g-C₃N₄; (2) More reasonable nano- or even subnanostructured g-C₃N₄ nanosheets should be continuously explored; (3) Novel modification strategies, such as defective engineering, heterojunction construction, and surface functional group regulation, should be introduced to improve the reactivity and selectivity of the g-C₃N₄ nanosheets; (4) The application of in situ characterization techniques (such as in situ diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS), electron spin resonance (ESR) spectroscopy, and Raman spectroscopy) should also be strengthened to monitor the detailed catalytic process and investigate the g-C₃N₄ nanosheet structure-efficiency relationship. (5) To gain a deeper understanding of the relationship between the macroscopic properties and the microscopic structure, the combination of theoretical calculations and experimental results should be strengthened, which will be beneficial for exploiting high-quality g-C₃N₄ nanosheets.
- Carbon nitride,
- Nanosheets,
- Exfoliation,
- Photocatalysis,
- Semiconductor
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沈阳化工大学材料科学与工程学院沈阳 110142