English

Carbon Nanotube Films: Preparation and Application in Flexible Electronics

• WANG Haomin ^1,2, ,
• HE Maoshuai ^{1,3, ,} ,
• ZHANG Yingying ^{2, ,}

• 1.

  School of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, Shandong Province, P. R. China

• 2.

  Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China

• 3.

  College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong Province, P. R. China

Corresponding author: Emails: hemaoshuai@qust.edu.cn (H.M.); Tel.: +86-13864807842 (H.M.); Emails: yingyingzhang@tsinghua.edu.cn (Z.Y.). Tel.: +86-10-62798503 (Z.Y.)

• Received Date: 08 November 2018
  Accepted Date: 03 December 2018
  Revised Date: 30 November 2018
  Available Online: 15 November 2019
• Fund Project:

  The project was supported by the National Natural Science Foundation of China (51672153) and the National Key Basic Research Program of China (973) (2016YFA0200103)

Abstract: Flexible electronic devices have attracted immense attention in recent years. Conventional electronics that are predominantly fabricated with rigid metallic materials demonstrate poor flexibility. Compared to traditional electronic devices, flexible electronic devices with better flexibility can adapt to different working environments. Consequently, they fit perfectly with different systems with minimal rejections. However, such flexible electronic devices need to achieve good extensibility and flexibility without compromising on their electronic properties. Therefore, new challenges and requirements arise while fabricating conductive materials. Manufacturing of flexible metal electrodes for flexible electronic devices include strategies such as reducing the thickness of the electrodes and designing electrodes with unique structures. However, these technologies are complex and expensive. Carbon nanotube (CNT) films exhibit good flexibility, excellent conductivity, good chemical and thermal stability, as well as good optical transparency, making them ideal candidates for flexible electronics. Therefore, the preparation and application of CNT films for the development of next generation flexible electronics have been extensively studied. In this review, we summarize the recent advances in the preparation of CNT films and their application in flexible electronic devices. Initially, the two main kinds of preparation methods for CNT films—dry and wet methods—are introduced. The dry methods for CNT film preparation include the membrane extraction method based on a vertical array of CNTs and the floating catalytic chemical vapor deposition method. Moreover, the wet methods predominantly discussed include vacuum filtration method, impregnation method, electrodeposition method, self-assembly method, and spraying method. Subsequently, the latest research advancements in assembly techniques, their performance and applications in various flexible electronics are discussed. This review primarily introduces the application of CNT films in the fields of flexible sensors, flexible energy devices, flexible transistors, and flexible display screens. The fundamentals of typical flexible sensors, such as strain sensors, pressure sensors, gas sensors, temperature sensors, and humidity sensors are presented. Besides, flexible lithium-ion batteries, flexible nanogenerators, and flexible thermoelectric devices based on CNT films are also investigated. Moreover, other flexible electronic devices, such as flexible transparent conductive film, flexible transistor, and flexible photodetector, based on CNT films are briefly described. Finally, advanced flexible electronics based on CNT films are summarized. The challenges and future prospects of these films are also discussed.

Key words:
• Carbon nanotube film
•  /  Dry method
•  /  Wet method
•  /  Conductive film
•  /  Flexible electronics

• 1. [1]

     Britnell, L.; Ribeiro, R. M.; Eckmann, A.; Jalil, R.; Belle, B. D.; Mishchenko, A.; Kim, Y. J.; Gorbachev, R. V.; Georgiou, T.; Morozov, S. V.; et al. Science 2013, 340, 1311. doi: 10.1126/science.1235547

  2. [2]

     Eda, G.; Fanchini, G.; Chhowalla, M. Nat. Nanotechnol. 2008, 3, 270. doi: 10.1038/nnano.2008.83

  3. [3]

     Gelinck, G. H.; Huitema, H. E. A.; Van Veenendaal, E.; Cantatore, E.; Schrijnemakers, L.; Van der Putten, J.; Geuns, T. C. T.; Beenhakkers, M.; Giesbers, J. B.; Huisman, B. H.; et al. Nat. Mater. 2004, 3, 106. doi: 10.1038/nmat1061

  4. [4]

     Kaltenbrunner, M.; Sekitani, T.; Reeder, J.; Yokota, T.; Kuribara, K.; Tokuhara, T.; Drack, M.; Schwoediauer, R.; Graz, I.; Bauer-Gogonea, S.; et al. Nature 2013, 499, 458. doi: 10.1038/nature12314

  5. [5]

     Mannsfeld, S. C. B.; Tee, B. C. K.; Stoltenberg, R. M.; Chen, C. V. H. H.; Barman, S.; Muir, B. V. O.; Sokolov, A. N.; Reese, C.; Bao, Z. Nat. Mater. 2010, 9, 859. doi: 10.1038/nmat2834

  6. [6]

     Minemawari, H.; Yamada, T.; Matsui, H.; Tsutsumi, J.; Haas, S.; Chiba, R.; Kumai, R.; Hasegawa, T. Nature 2011, 475, 364. doi: 10.1038/nature10313

  7. [7]

     Wu, X. -L.; Wen, T.; Guo, H. -L.; Yang, S.; Wang, X.; Xu, A. -W. ACS Nano 2013, 7, 3589. doi: 10.1021/nn400566d

  8. [8]

     Xu, Y.; Lin, Z.; Huang, X.; Wang, Y.; Huang, Y.; Duan, X. Adv. Mater. 2013, 25, 5779. doi: 10.1002/adma.201301928

  9. [9]

     Wang, X.; Liu, J. Micromachines 2016, 7, 206. doi: 10.3390/mi7120206

  10. [10]

      Wang, S.; Xu, J.; Wang, W.; Wang, G. -J. N.; Rastak, R.; Molina-Lopez, F.; Chung, J. W.; Niu, S.; Feig, V. R.; Lopez, J.; et al. Nature 2018, 555, 83. doi: 10.1038/nature25494

  11. [11]

      Takei, K.; Takahashi, T.; Ho, J. C.; Ko, H.; Gillies, A. G.; Leu, P. W.; Fearing, R. S.; Javey, A. Nat. Mater. 2010, 9, 821. doi: 10.1038/nmat2835

  12. [12]

      Wu, W.; Wen, X.; Wang, Z. L. Science 2013, 340, 952. doi: 10.1126/science.1234855

  13. [13]

      Xu, Y.; Lin, Z.; Huang, X.; Liu, Y.; Huang, Y.; Duan, X. ACS Nano 2013, 7, 4042. doi: 10.1021/nn4000836

  14. [14]

      Yeo, W. H.; Kim, Y. S.; Lee, J.; Ameen, A.; Shi, L.; Li, M.; Wang, S.; Ma, R.; Jin, S. H.; Kang, Z.; et al. Adv. Mater. 2013, 25, 2773. doi: 10.1002/adma.201204426

  15. [15]

      Sun, D. -M.; Liu, C.; Ren, W. -C.; Cheng, H. -M. Small 2013, 9, 1188. doi: 10.1002/smll.201203154

  16. [16]

      Bian, Z.; Song, J.; Webb, R. C.; Bonifas, A. P.; Rogers, J. A.; Huang, Y. RSC Adv. 2014, 4, 5694. doi: 10.1039/c3ra45277h

  17. [17]

      Tortorich, R. P.; Choi, J. -W. Nanomaterials 2013, 3, 453. doi: 10.3390/nano3030453

  18. [18]

      夏凯伦, 蹇木强, 张莹莹.物理化学学报, 2016, 32, 2427. doi: 10.3866/PKU.WHXB201607261Xia, K. -L.; Jian, M. -Q.; Zhang, Y. -Y. Acta Phys. -Chim. Sin. 2016, 32, 2427. doi: 10.3866/PKU.WHXB201607261

  19. [19]

      Zhou, Y.; Azumi, R. Sci. Technol. Adv. Mater. 2016, 17, 493. doi: 10.1080/14686996.2016.1214526

  20. [20]

      Brosseau, C. Surf. Coat. Technol. 2011, 206, 753. doi: 10.1016/j.surfcoat.2011.02.017

  21. [21]

      Chen, H.; Zeng, S.; Chen, M.; Zhang, Y.; Li, Q. Carbon 2015, 92, 271. doi: 10.1016/j.carbon.2015.04.010

  22. [22]

      Chen, K.; Gao, W.; Emaminejad, S.; Kiriya, D.; Ota, H.; Nyein, H. Y. Y.; Takei, K.; Javey, A. Adv. Mater. 2016, 28, 4397. doi: 10.1002/adma.201504958

  23. [23]

      Luo, M.; Liu, Y.; Huang, W.; Qiao, W.; Zhou, Y.; Ye, Y.; Chen, L. -S. Micromachines 2017, 8, 12. doi: 10.3390/mi8010012

  24. [24]

      Lin, Y. M.; Appenzeller, J.; Chen, Z. H.; Chen, Z. G.; Cheng, H. M.; Avouris, P. IEEE Electron Device Lett. 2005, 26, 823. doi: 10.1109/led.2005.857704

  25. [25]

      Lin, Y. M.; Appenzeller, J.; Knoch, J.; Avouris, P. IEEE Trans. Nanotechnol. 2005, 4, 481. doi: 10.1109/tnano.2005.851427

  26. [26]

      Qiu, C.; Zhang, Z.; Xiao, M.; Yang, Y.; Zhong, D.; Peng, L. -M. Science 2017, 355, 271. doi: 10.1126/science.aaj1628

  27. [27]

      Li, C. Y.; Chou, T. W. Phys. Rev. B 2005, 71, 235414. doi: 10.1103/PhysRevB.71.235414

  28. [28]

      Paillet, M.; Michel, T.; Meyer, J. C.; Popov, V. N.; Henrard, L.; Roth, S.; Sauvajol, J. L. Phys. Rev. Lett. 2006, 96, 257401. doi: 10.1103/PhysRevLett.96.257401

  29. [29]

      Poncharal, P.; Wang, Z. L.; Ugarte, D.; de Heer, W. A. Science 1999, 283, 1513. doi: 10.1126/science.283.5407.1513

  30. [30]

      Treacy, M. M. J.; Ebbesen, T. W.; Gibson, J. M. Nature 1996, 381, 678. doi: 10.1038/381678a0

  31. [31]

      Yu, M. F.; Files, B. S.; Arepalli, S.; Ruoff, R. S. Phys. Rev. Lett. 2000, 84, 5552. doi: 10.1103/PhysRevLett.84.5552

  32. [32]

      Yu, M. F.; Lourie, O.; Dyer, M. J.; Moloni, K.; Kelly, T. F.; Ruoff, R. S. Science 2000, 287, 637. doi: 10.1126/science.287.5453.637

  33. [33]

      Zhang, R.; Wen, Q.; Qian, W.; Su, D. S.; Zhang, Q.; Wei, F. Adv. Mater. 2011, 23, 3387. doi: 10.1002/adma.201100344

  34. [34]

      Iijima, S. Nature 1991, 354, 56. doi: 10.1038/354056a0

  35. [35]

      Bethune, D. S.; Kiang, C. H.; Devries, M. S.; Gorman, G.; Savoy, R.; Vazquez, J.; Beyers, R. Nature 1993, 363, 605. doi: 10.1038/363605a0

  36. [36]

      Ouyang, M.; Huang, J. L.; Cheung, C. L.; Lieber, C. M. Science 2001, 291, 97. doi: 10.1126/science.291.5501.97

  37. [37]

      Wildoer, J. W. G.; Venema, L. C.; Rinzler, A. G.; Smalley, R. E.; Dekker, C. Nature 1998, 391, 59. doi: 10.1038/34139

  38. [38]

      Zhang, R.; Zhang, Y.; Wei, F. Acc. Chem. Res. 2017, 50, 179. doi: 10.1021/acs.accounts.6b00430

  39. [39]

      Gavillet, J.; Loiseau, A.; Ducastelle, F.; Thair, S.; Bernier, P.; Stephan, O.; Thibault, J.; Charlier, J. C. Carbon 2002, 40, 1649. doi: 10.1016/s0008-6223(02)00007-6

  40. [40]

      Iijima, S.; Ichihashi, T. Nature 1993, 363, 603. doi: 10.1038/363603a0

  41. [41]

      Liu, C.; Cong, H. T.; Li, F.; Tan, P. H.; Cheng, H. M.; Lu, K.; Zhou, B. L. Carbon 1999, 37, 1865. doi: 10.1016/s0008-6223(99)00196-7

  42. [42]

      Zhao, X.; Ohkohchi, M.; Wang, M.; Iijima, S.; Ichihashi, T.; Ando, Y. Carbon 1997, 35, 775. doi: 10.1016/s0008-6223(97)00033-x

  43. [43]

      Fischer, J. E.; Dai, H.; Thess, A.; Lee, R.; Hanjani, N. M.; Dehaas, D. L.; Smalley, R. E. Phys. Rev. B 1997, 55, R4921. doi: 10.1103/PhysRevB.55.R4921

  44. [44]

      Guo, T.; Nikolaev, P.; Rinzler, A. G.; Tomanek, D.; Colbert, D. T.; Smalley, R. E. J. Phys. Chem. 1995, 99, 10694. doi: 10.1021/j100027a002

  45. [45]

      Kong, J.; Soh, H. T.; Cassell, A. M.; Quate, C. F.; Dai, H. J. Nature 1998, 395, 878. doi: 10.1038/27632

  46. [46]

      Thess, A.; Lee, R.; Nikolaev, P.; Dai, H. J.; Petit, P.; Robert, J.; Xu, C. H.; Lee, Y. H.; Kim, S. G.; Rinzler, A. G.; et al. Science 1996, 273, 483. doi: 10.1126/science.273.5274.483

  47. [47]

      He, M.; Chernov, A. I.; Fedotov, P. V.; Obraztsova, E. D.; Sainio, J.; Rikkinen, E.; Jiang, H.; Zhu, Z.; Tian, Y.; Kauppinen, E. I.; et al. J. Am. Chem. Soc. 2010, 132, 13994. doi: 10.1021/ja106609y

  48. [48]

      He, M.; Zhang, S.; Wu, Q.; Xue, H.; Xin, B.; Wang, D.; Zhang, J. Adv. Mater. 2018, e1800805. (in press) doi: 10.1002/adma.201800805

  49. [49]

      Jiang, K. L.; Li, Q. Q.; Fan, S. S. Nature 2002, 419, 801. doi: 10.1038/419801a

  50. [50]

      Zhang, Y. Y.; Zou, G. F.; Doorn, S. K.; Htoon, H.; Stan, L.; Hawley, M. E.; Sheehan, C. J.; Zhu, Y. T.; Jia, Q. X. ACS Nano 2009, 3, 2157. doi: 10.1021/nn9003988

  51. [51]

      Zhang, Y. Y.; Stan, L.; Xu, P.; Wang, H. L.; Doorn, S. K.; Htoon, H.; Zhu, Y. T.; Jia, Q. X. Carbon 2009, 47, 3332. doi: 10.1016/j.carbon.2009.07.056

  52. [52]

      Xie, H. H.; Zhang, R. F.; Zhang, Y. Y.; Li, P.; Jin, Y. G.; Wei, F. Carbon 2013, 52, 535. doi: 10.1016/j.carbon.2012.10.006

  53. [53]

      Zhang, R. F.; Zhang, Y. Y.; Zhang, Q.; Xie, H. H.; Qian, W. Z.; Wei, F. ACS Nano 2013, 7, 6156. doi: 10.1021/nn401995z

  54. [54]

      Zhang, M.; Fang, S. L.; Zakhidov, A. A.; Lee, S. B.; Aliev, A. E.; Williams, C. D.; Atkinson, K. R.; Baughman, R. H. Science 2005, 309, 1215. doi: 10.1126/science.1115311

  55. [55]

      Liu, K.; Sun, Y.; Liu, P.; Wang, J.; Li, Q.; Fan, S.; Jiang, K. Nanotechnology 2009, 20, 335705. doi: 10.1088/0957-4484/20/33/335705

  56. [56]

      Jiang, K.; Wang, J.; Li, Q.; Liu, L.; Liu, C.; Fan, S. Adv. Mater. 2011, 23, 1154. doi: 10.1002/adma.201003989

  57. [57]

      Ma, W.; Song, L.; Yang, R.; Zhang, T.; Zhao, Y.; Sun, L.; Ren, Y.; Liu, D.; Liu, L.; Shen, J.; et al. Nano Lett. 2007, 7, 2307. doi: 10.1021/nl070915c

  58. [58]

      Wang, B. -W.; Jiang, S.; Zhu, Q. -B.; Sun, Y.; Luan, J.; Hou, P. -X.; Qiu, S.; Li, Q. -W.; Liu, C.; Sun, D. -M.; et al. Adv. Mater. 2018, 30, 1802057. doi: 10.1002/adma.201802057

  59. [59]

      Zhang, D.; Ryu, K.; Liu, X.; Polikarpov, E.; Ly, J.; Tompson, M. E.; Zhou, C. Nano Lett. 2006, 6, 1880. doi: 10.1021/nl0608543

  60. [60]

      Wu, Z. C.; Chen, Z. H.; Du, X.; Logan, J. M.; Sippel, J.; Nikolou, M.; Kamaras, K.; Reynolds, J. R.; Tanner, D. B.; Hebard, A. F.; et al. Science 2004, 305, 1273. doi: 10.1126/science.1101243

  61. [61]

      He, X.; Gao, W.; Xie, L.; Li, B.; Zhang, Q.; Lei, S.; Robinson, J. M.; Haroz, E. H.; Doorn, S. K.; Wang, W.; et al. Nat. Nanotechnol. 2016, 11, 633. doi: 10.1038/nnano.2016.44

  62. [62]

      Lima, M. D.; de Andrade, M. J.; Skakalova, V.; Nobre, F.; Bergmann, C. P.; Roth, S. Phys. Status Solidi-Rapid Res. Lett. 2007, 1, 165. doi: 10.1002/pssr.200701086

  63. [63]

      Ng, M. H. A.; Hartadi, L. T.; Tan, H.; Poa, C. H. P. Nanotechnology 2008, 19, 205703. doi: 10.1088/0957-4484/19/20/205703

  64. [64]

      Chen, Z.; Yang, Y. L.; Wu, Z. Y.; Luo, G.; Xie, L. M.; Liu, Z. F.; Ma, S. J.; Guo, W. L. J. Phys. Chem. B 2005, 109, 5473. doi: 10.1021/jp045796t

  65. [65]

      Pei, S.; Du, J.; Zeng, Y.; Liu, C.; Cheng, H. -M. Nanotechnology 2009, 20, 235707. doi: 10.1088/0957-4484/20/23/235707

  66. [66]

      Engel, M.; Small, J. P.; Steiner, M.; Freitag, M.; Green, A. A.; Hersam, M. C.; Avouris, P. ACS Nano 2008, 2, 2445. doi: 10.1021/nn800708w

  67. [67]

      Jia, L.; Zhang, Y.; Li, J.; You, C.; Xie, E. J. Appl. Phys. 2008, 104, 074318. doi: 10.1063/1.2996033

  68. [68]

      Park, H.; Afzali, A.; Han, S. -J.; Tulevski, G. S.; Franklin, A. D.; Tersoff, J.; Hannon, J. B.; Haensch, W. Nat. Nanotechnol. 2012, 7, 787. doi: 10.1038/nnano.2012.189

  69. [69]

      Cao, Q.; Han, S. -J.; Tulevski, G. S.; Zhu, Y.; Lu, D. D.; Haensch, W. Nat. Nanotechnol. 2013, 8, 180. doi: 10.1038/nnano.2012.257

  70. [70]

      Joo, Y.; Brady, G. J.; Arnold, M. S.; Gopalan, P. Langmuir 2014, 30, 3460. doi: 10.1021/la500162x

  71. [71]

      Meitl, M. A.; Zhou, Y. X.; Gaur, A.; Jeon, S.; Usrey, M. L.; Strano, M. S.; Rogers, J. A. Nano Lett. 2004, 4, 1643. doi: 10.1021/nl0491935

  72. [72]

      Artukovic, E.; Kaempgen, M.; Hecht, D. S.; Roth, S.; GrUner, G. Nano Lett. 2005, 5, 757. doi: 10.1021/nl0505254o

  73. [73]

      Lee, Y. D.; Lee, K. -S.; Lee, Y. -H.; Ju, B. -K. Appl. Surf. Sci. 2007, 254, 513. doi: 10.1016/j.apsusc.2007.06.042

  74. [74]

      Li, Z.; Kandel, H. R.; Dervishi, E.; Saini, V.; Biris, A. S.; Biris, A. R.; Lupu, D. Appl. Phys. Lett. 2007, 91, 053115. doi: 10.1063/1.2767215

  75. [75]

      Tenent, R. C.; Barnes, T. M.; Bergeson, J. D.; Ferguson, A. J.; To, B.; Gedvilas, L. M.; Heben, M. J.; Blackburn, J. L. Adv. Mater. 2009, 21, 3210. doi: 10.1002/adma.200803551

  76. [76]

      Hopkins, A. R.; Straw, D. C.; Spurrell, K. C. Thin Solid Films 2011, 520, 1541. doi: 10.1016/j.tsf.2011.10.043

  77. [77]

      Carey, T.; Jones, C.; Le Moal, F.; Deganello, D.; Torrisi, F. ACS Appl. Mater. Interfaces 2018, 10, 19948. doi: 10.1021/acsami.8b02784

  78. [78]

      Kordas, K.; Mustonen, T.; Toth, G.; Jantunen, H.; Lajunen, M.; Soldano, C.; Talapatra, S.; Kar, S.; Vajtai, R.; Ajayan, P. M. Small 2006, 2, 1021. doi: 10.1002/smll.200600061

  79. [79]

      Fan, Z. J.; Wei, T.; Luo, G. H.; Wei, F. J. Mater. Sci. 2005, 40, 5075. doi: 10.1007/s10853-005-1622-7

  80. [80]

      Preston, C.; Song, D.; Dai, J.; Tsinas, Z.; Bavier, J.; Cumings, J.; Ballarotto, V.; Hu, L. Nano Research 2015, 8, 2242. doi: 10.1007/s12274-015-0735-9

  81. [81]

      Jian, M. Q.; Xia, K. L.; Wang, Q.; Yin, Z.; Wang, H. M.; Wang, C. Y.; Xie, H. H.; Zhang, M. C.; Zhang, Y. Y. Adv. Funct. Mater. 2017, 27, 1606066 doi: 10.1002/adfm.201606066

  82. [82]

      Wang, C. Y.; Li, X.; Gao, E. L.; Jian, M. Q.; Xia, K. L.; Wang, Q.; Xu, Z. P.; Ren, T. L.; Zhang, Y. Y. Adv. Mater. 2016, 28, 6640. doi: 10.1002/adma.201601572

  83. [83]

      Sekitani, T.; Noguchi, Y.; Hata, K.; Fukushima, T.; Aida, T.; Someya, T. Science 2008, 321, 1468. doi: 10.1126/science.1160309

  84. [84]

      Zhang, M. C.; Wang, C. Y.; Wang, H. M.; Jian, M. Q.; Hao, X. Y.; Zhang, Y. Y. Adv. Funct. Mater. 2017, 27, 1604795. doi: 10.1002/adfm.201604795

  85. [85]

      Kang, I.; Schulz, M. J.; Kim, J. H.; Shanov, V.; Shi, D. Smart Mater. Struct. 2006, 15, 737. doi: 10.1088/0964-1726/15/3/009

  86. [86]

      Thostenson, E. T.; Chou, T. -W. Adv. Mater. 2006, 18, 2837. doi: 10.1002/adma.200600977

  87. [87]

      Chun, K. -Y.; Oh, Y.; Rho, J.; Ahn, J. -H.; Kim, Y. -J.; Choi, H. R.; Baik, S. Nat. Nanotechnol. 2010, 5, 853. doi: 10.1038/nnano.2010.232

  88. [88]

      Lipomi, D. J.; Vosgueritchian, M.; Tee, B. C. K.; Hellstrom, S. L.; Lee, J. A.; Fox, C. H.; Bao, Z. Nat. Nanotechnol. 2011, 6, 788. doi: 10.1038/nnano.2011.184

  89. [89]

      Zhao, H. B.; Zhang, Y. Y.; Bradford, P. D.; Zhou, Q. A.; Jia, Q. X.; Yuan, F. G.; Zhu, Y. T. Nanotechnology 2010, 21, 305502. doi: 10.1088/0957-4484/21/30/305502

  90. [90]

      Dharap, P.; Li, Z. L.; Nagarajaiah, S.; Barrera, E. V. Nanotechnology 2004, 15, 379. doi: 10.1088/0957-4484/15/3/026

  91. [91]

      Yamada, T.; Hayamizu, Y.; Yamamoto, Y.; Yomogida, Y.; Izadi-Najafabadi, A.; Futaba, D. N.; Hata, K. Nat. Nanotechnol. 2011, 6, 296. doi: 10.1038/nnano.2011.36

  92. [92]

      Roh, E.; Hwang, B. -U.; Kim, D.; Kim, B. -Y.; Lee, N. -E. ACS Nano 2015, 9, 6252. doi: 10.1021/acsnano.5b01613

  93. [93]

      Wang, C. Y.; Xia, K. L.; Zhang, M. C.; Jian, M. Q.; Zhang, Y. Y. ACS Appl. Mater. Interfaces 2017, 9, 39484. doi: 10.1021/acsami.7b13356

  94. [94]

      Xia, K. L.; Wang, C. Y.; Jian, M. Q.; Wang, Q.; Zhang, Y. Y. Nano Research 2018, 11, 1124. doi: 10.1007/s12274-017-1731-z

  95. [95]

      Park, S.; Kim, H.; Vosgueritchian, M.; Cheon, S.; Kim, H.; Koo, J. H.; Kim, T. R.; Lee, S.; Schwartz, G.; Chang, H.; Bao, Z. Adv. Mater. 2014, 26, 7324. doi: 10.1002/adma.201402574

  96. [96]

      Kim, Y.; Chortos, A.; Xu, W.; Liu, Y.; Oh, J. Y.; Son, D.; Kang, J.; Foudeh, A. M.; Zhu, C.; Lee, Y.; et al. Science 2018, 360, 998. doi: 10.1126/science.aao0098

  97. [97]

      Jian, M.; Xia, K.; Wang, Q.; Yin, Z.; Wang, H.; Wang, C.; Xie, H.; Zhang, M.; Zhang, Y. Adv. Funct. Mater. 2017, 27, 1606066. doi: 10.1002/adfm.201606066

  98. [98]

      Woo, C. -S.; Lim, C. -H.; Cho, C. -W.; Park, B.; Ju, H.; Min, D. -H.; Lee, C. -J.; Lee, S. -B. Microelectron. Eng. 2007, 84, 1610. doi: 10.1016/j.mee.2007.01.162

  99. [99]

      Lin, Z. -D.; Young, S. -J.; Chang, S. -J. IEEE Sensors J. 2015, 15, 7017. doi: 10.1109/jsen.2015.2472968

  100. [100]

       Hong, S. Y.; Lee, Y. H.; Park, H.; Jin, S. W.; Jeong, Y. R.; Yun, J.; You, I.; Zi, G.; Ha, J. S. Adv. Mater. 2016, 28, 930. doi: 10.1002/adma.201504659

  101. [101]

       Honda, W.; Harada, S.; Ishida, S.; Arie, T.; Akita, S.; Takei, K. Adv. Mater. 2015, 27, 4674. doi: 10.1002/adma.201502116

  102. [102]

       Feng, Y.; Cabezas, A. L.; Chen, Q.; Zheng, L. -R.; Zhang, Z. -B. IEEE Sensors J. 2012, 12, 2844. doi: 10.1109/jsen.2012.2202390

  103. [103]

       Rigoni, F.; Freddi, S.; Pagliara, S.; Drera, G.; Sangaletti, L.; Suisse, J. M.; Bouvet, M.; Malovichko, A. M.; Emelianov, A. V.; Bobrinetskiy, I. I. Nanotechnology 2017, 28, 255502. doi: 10.1088/1361-6528/aa6da7

  104. [104]

       Tai, Y.; Lubineau, G. Small 2017, 13, 1603486. doi: 10.1002/smll.201603486

  105. [105]

       Zhao, H.; Zhang, T.; Qi, R.; Dai, J.; Liu, S.; Fei, T. ACS Appl. Mater. Interfaces 2017, 9, 28002. doi: 10.1021/acsami.7b05181

  106. [106]

       Wang, H.; Wang, C.; Jian, M.; Wang, Q.; Xia, K.; Yin, Z.; Zhang, M.; Liang, X.; Zhang, Y. Nano Research 2018, 11, 2347. doi: 10.1007/s12274-017-1782-1

  107. [107]

       Chen, P. -C.; Shen, G.; Sukcharoenchoke, S.; Zhou, C. Appl. Phys. Lett. 2009, 94, 043133. doi: 10.1063/1.3069277

  108. [108]

       Pan, S.; Lin, H.; Deng, J.; Chen, P.; Chen, X.; Yang, Z.; Peng, H. Adv. Energy Mater. 2015, 5, 1401438. doi: 10.1002/aenm.201401438

  109. [109]

       Kaempgen, M.; Chan, C. K.; Ma, J.; Cui, Y.; Gruner, G. Nano Lett. 2009, 9, 1872. doi: 10.1021/nl8038579

  110. [110]

       Hu, S.; Rajamani, R.; Yu, X. Appl. Phys. Lett. 2012, 100, 104103. doi: 10.1063/1.3691948

  111. [111]

       Xi, S.; Kang, Y.; Qu, S.; Han, S. Mater. Lett. 2016, 175, 126. doi: 10.1016/j.matlet.2016.03.143

  112. [112]

       Fang, X.; Shen, C.; Ge, M.; Rong, J.; Liu, Y.; Zhang, A.; Wei, F.; Zhou, C. Nano Energy 2015, 12, 43. doi: 10.1016/j.nanoen.2014.11.052

  113. [113]

       Kang, C.; Cha, E.; Baskaran, R.; Choi, W. Nanotechnology 2016, 27, 105402. doi: 10.1088/0957-4484/27/10/105402

  114. [114]

       Sun, X.; Liu, Z.; Li, N.; Wu, X.; Nie, Y.; Pang, Z.; Yue, L.; Tang, H. Nano 2016, 11, 1650120. doi: 10.1142/s1793292016501204

  115. [115]

       Kim, S.; Song, H.; Jeong, Y. Carbon 2017, 113, 371. doi: 10.1016/j.carbon.2016.11.019

  116. [116]

       Chew, S. Y.; Ng, S. H.; Wang, J.; Novak, P.; Krumeich, F.; Chou, S. L.; Chen, J.; Liu, H. K. Carbon 2009, 47, 2976. doi: 10.1016/j.carbon.2009.06.045

  117. [117]

       Lee, S.; Song, H.; Hwang, J. Y.; Jeong, Y. Fib. Polym. 2017, 18, 2334. doi: 10.1007/s12221-017-7715-5

  118. [118]

       Cheng, J.; Ding, W.; Zi, Y.; Lu, Y.; Ji, L.; Liu, F.; Wu, C.; Wang, Z. L. Nat. Commun. 2018, 9, 3733. doi: 10.1038/s41467-018-06198-x

  119. [119]

       Khan, S. A.; Zhang, H. L.; Xie, Y.; Gao, M.; Shah, M. A.; Qadir, A.; Lin, Y. Adv. Eng. Mater. 2017, 19, 1600710. doi: 10.1002/adem.201600710

  120. [120]

       Wang, X.; Yang, B.; Liu, J.; Zhu, Y.; Yang, C.; He, Q. Sci. Rep. 2016, 6, 36409. doi: 10.1038/srep36409

  121. [121]

       Kim, S. L.; Choi, K.; Tazebay, A.; Yu, C. ACS Nano 2014, 8, 2377. doi: 10.1021/nn405893t

  122. [122]

       Blackburn, J. L.; Ferguson, A. J.; Cho, C.; Grunlan, J. C. Adv. Mater. 2018, 30, 1704386. doi: 10.1002/adma.201704386

  123. [123]

       Zhou, W.; Fan, Q.; Zhang, Q.; Cai, L.; Li, K.; Gu, X.; Yang, F.; Zhang, N.; Wang, Y.; Liu, H.; Zhou, W.; Xie, S. Nat. Commun. 2017, 8, 14886. doi: 10.1038/ncomms14886

  124. [124]

       Zhang, Y. Y.; Sheehan, C. J.; Zhai, J. Y.; Zou, G. F.; Luo, H. M.; Xiong, J.; Zhu, Y. T.; Jia, Q. X. Adv. Mater. 2010, 22, 3027. doi: 10.1002/adma.200904426

  125. [125]

       Hecht, D. S.; Thomas, D.; Hu, L.; Ladous, C.; Lam, T.; Park, Y.; Irvin, G.; Drzaic, P. J. Soc. Inform. Display 2009, 17, 941. doi: 10.1889/jsid17.11.941

  126. [126]

       Feng, C.; Liu, K.; Wu, J. -S.; Liu, L.; Cheng, J. -S.; Zhang, Y.; Sun, Y.; Li, Q.; Fan, S.; Jiang, K. Adv. Funct. Mater. 2010, 20, 885. doi: 10.1002/adfm.200901960

  127. [127]

       Fan, S. S.; Chapline, M. G.; Franklin, N. R.; Tombler, T. W.; Cassell, A. M.; Dai, H. J. Science 1999, 283, 512. doi: 10.1126/science.283.5401.512

  128. [128]

       Yao, Z.; Kane, C. L.; Dekker, C. Phys. Rev. Lett. 2000, 84, 2941. doi: 10.1103/PhysRevLett.84.2941

  129. [129]

       Duan, X. F.; Huang, Y.; Cui, Y.; Wang, J. F.; Lieber, C. M. Nature 2001, 409, 66. doi: 10.1038/35051047

  130. [130]

       Bachilo, S. M.; Strano, M. S.; Kittrell, C.; Hauge, R. H.; Smalley, R. E.; Weisman, R. B. Science 2002, 298, 2361. doi: 10.1126/science.1078727

  131. [131]

       Baughman, R. H.; Zakhidov, A. A.; de Heer, W. A. Science 2002, 297, 787. doi: 10.1126/science.1060928

  132. [132]

       Gudiksen, M. S.; Lauhon, L. J.; Wang, J.; Smith, D. C.; Lieber, C. M. Nature 2002, 415, 617. doi: 10.1038/415617a

  133. [133]

       Lee, C. J.; Lee, T. J.; Lyu, S. C.; Zhang, Y.; Ruh, H.; Lee, H. J. Appl. Phys. Lett. 2002, 81, 3648. doi: 10.1063/1.1518810

  134. [134]

       Freitag, M.; Martin, Y.; Misewich, J. A.; Martel, R.; Avouris, P. H. Nano Lett. 2003, 3, 1067. doi: 10.1021/nl034313e

  135. [135]

       Levitsky, I. A.; Euler, W. B. Appl. Phys. Lett. 2003, 83, 1857. doi: 10.1063/1.1606099

  136. [136]

       Xia, Y. N.; Yang, P. D.; Sun, Y. G.; Wu, Y. Y.; Mayers, B.; Gates, B.; Yin, Y. D.; Kim, F.; Yan, Y. Q. Adv. Mater. 2003, 15, 353. doi: 10.1002/adma.200390087

  137. [137]

       Qiu, X. H.; Freitag, M.; Perebeinos, V.; Avouris, P. Nano Lett. 2005, 5, 749. doi: 10.1021/nl050227y

  138. [138]

       Zhu, C.; Chortos, A.; Wang, Y.; Pfattner, R.; Lei, T.; Hinckley, A. C.; Pochorovski, I.; Yan, X.; To, J. W. F.; Oh, J. Y.; et al. Nat. Electron. 2018, 1, 183. doi: 10.1038/s41928-018-0041-0

  139. [139]

       Liu, Y.; Wei, N.; Zeng, Q.; Han, J.; Huang, H.; Zhong, D.; Wang, F.; Ding, L.; Xia, J.; Xu, H.; et al. Adv. Opt. Mater. 2016, 4, 238. doi: 10.1002/adom.201500529

  140. [140]

       Zeng, Q. S.; Wang, S.; Yang, L. J.; Wang, Z. X.; Pei, T.; Zhang, Z. Y.; Peng, L. M.; Zhou, W. W.; Liu, J.; Zhou, W. Y.; et al. Opt. Mater. Express 2012, 2, 839. doi: 10.1364/Ome.2.000839

  141. [141]

       Suzuki, D.; Ochiai, Y.; Nakagawa, Y.; Kuwahara, Y.; Saito, T.; Kawano, Y. ACS Appl. Nano Mater. 2018, 1, 2469. doi: 10.1021/acsanm.8b00421

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