Effect of Pressure on Cesium Iodide Band Gap

引用本文: CEDILLO Andrés, CORTONA Pietro. Effect of Pressure on Cesium Iodide Band Gap[J]. 物理化学学报, 2018, 34(2): 208-212. doi: 10.3866/PKU.WHXB201707031 shu

Citation: CEDILLO Andrés, CORTONA Pietro. Effect of Pressure on Cesium Iodide Band Gap[J]. Acta Physico-Chimica Sinica, 2018, 34(2): 208-212. doi: 10.3866/PKU.WHXB201707031 shu

Effect of Pressure on Cesium Iodide Band Gap

CEDILLO Andrés ^1, ,
CORTONA Pietro ^2,

1.
Departamento de Química, Universidad Autónoma Metropolitana-Iztapalapa, San Rafael Atlixco 186, 09340 México, DF, México;
2.
Laboratoire Structures, Propriétés et Modélisation des Solides, CNRS UMR 8580, Université Paris-Saclay, CentraleSupélec, Grande Voie des Vignes, F-92295 Châtenay-Malabry, France
基金项目:
A Lithuanian State Scholarship from the Education Exchanges Support Foundation was granted to A.C. Support from CONACYT grant 237045 and the hospitality of the SPMS Laboratory and Vilnius University were also acknowledged

摘要: The evolution of cesium iodide band gap as a function of pressure is studied in the range from 0 to 60 GPa. Within this range, two structural phase transitions occurred, and the band gap was affected by the compression pressure and structural rearrangement. The band gap estimation under pressure, as obtained by the density functional theory methods, successfully reproduced the experimental trend of the optical gap and electrical resistivity, namely, a general decreasing tendency, an early maximum, and a discontinuous peak around 40 GPa.

关键词:

English

Effect of Pressure on Cesium Iodide Band Gap

CEDILLO Andrés ^1, ,
CORTONA Pietro ^2,

1.
Departamento de Química, Universidad Autónoma Metropolitana-Iztapalapa, San Rafael Atlixco 186, 09340 México, DF, México;
2.
Laboratoire Structures, Propriétés et Modélisation des Solides, CNRS UMR 8580, Université Paris-Saclay, CentraleSupélec, Grande Voie des Vignes, F-92295 Châtenay-Malabry, France
Received Date: 05 May 2017
Revised Date: 15 June 2017
Fund Project:
A Lithuanian State Scholarship from the Education Exchanges Support Foundation was granted to A.C. Support from CONACYT grant 237045 and the hospitality of the SPMS Laboratory and Vilnius University were also acknowledged

Abstract: The evolution of cesium iodide band gap as a function of pressure is studied in the range from 0 to 60 GPa. Within this range, two structural phase transitions occurred, and the band gap was affected by the compression pressure and structural rearrangement. The band gap estimation under pressure, as obtained by the density functional theory methods, successfully reproduced the experimental trend of the optical gap and electrical resistivity, namely, a general decreasing tendency, an early maximum, and a discontinuous peak around 40 GPa.

Key words:

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Effect of Pressure on Cesium Iodide Band Gap

English

Effect of Pressure on Cesium Iodide Band Gap

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Effect of Pressure on Cesium Iodide Band Gap

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Effect of Pressure on Cesium Iodide Band Gap

CCS Chemistry：嵌段共聚物自组装成 “三明治”二维有机材料，实现纳米级压力传感功能

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