Citation: XU Guo-Cheng, DENG Xian-Yun, LI Jun-Li, ZHANG Rui, XIE Yun-Peng, TU Guo-Li, XIA Jiang-Bin, LU Xing. Lead Iodide as a New Type of Hole Transport Layer for the High Performance of P3HT:PC₆₁BM-Based Solar Cells[J]. Acta Physico-Chimica Sinica, ;2016, 32(6): 1307-1313. doi: 10.3866/PKU.WHXB201604083 shu

Lead Iodide as a New Type of Hole Transport Layer for the High Performance of P3HT:PC₆₁BM-Based Solar Cells

1.
State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China;
2.
Wuhan National Laboratory for Optoelectronics, Wuhan 430074, P. R. China;
3.
College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China

Received Date: 19 February 2016
Revised Date: 7 April 2016

Fund Project: The project was supported by the National Natural Science Foundation of China (51472095).

We develop a novel hole extracting buffer layer material, namely PbI₂. The structure of the device we fabricate is ITO/PbI₂/P3HT:PC₆₁BM/Al (indium tin oxide/lead iodide/poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester/aluminum cathode). The preparation method involves spin-coating and thermal evaporation. We study the effectiveness of using PbI₂ in the prototype ITO/P3HT:PC₆₁BM/Al polymer solar cell devices. The concentration, annealing temperature, and annealing time all have an influence on the quality of the PbI₂ films. Obviously, higher-quality PbI₂ films will lead to better power conversion efficiency. The transmittance, crystallization, and morphology properties of the PbI₂ films can be used to describe the quality of the films. We characterize the PbI₂ film affording the best performance by UV-Vis spectrophotometry, X-ray powder diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). Our results reveal that the performance of the solar cell device is sensitive to the concentration of PbI₂, and the best conditions are a concentration of 3 mg·mL^-1, annealing temperature of 100 ℃, and annealing time of 30 min. The open circuit voltage (V_oc) is 0.45 V, the short circuit current density (J_sc) is 7.9 mA·cm^-2, and the fill factor (FF) is 0.46. Compared with the devices without any buffer layer (0.85%), the power conversion efficiency (PCE) using PbI₂ as the buffer layer can reach 1.64%.
- Polymer solar cell,
- Anode buffer layer,
- Lead iodide,
- Concentration,
- Power conversion efficiency
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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Lead Iodide as a New Type of Hole Transport Layer for the High Performance of P3HT:PC61BM-Based Solar Cells

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通讯作者: 陈斌, bchen63@163.com

Lead Iodide as a New Type of Hole Transport Layer for the High Performance of P3HT:PC₆₁BM-Based Solar Cells