Citation: WU Hai-Fei, WU Ke, ZHANG Han-Jie, LIAO Qing, HE Pi-Mo. Oxidation and Oxygen Thermal Desorption Mechanism on Narrow-Gap IV-VI Semiconductor PbTe(111) Surface[J]. Acta Physico-Chimica Sinica, ;2012, 28(05): 1252-1256. doi: 10.3866/PKU.WHXB201202131 shu

Oxidation and Oxygen Thermal Desorption Mechanism on Narrow-Gap IV-VI Semiconductor PbTe(111) Surface

WU Hai-Fei ¹ ,
WU Ke ² ,
ZHANG Han-Jie ² ,
LIAO Qing ² ,
HE Pi-Mo ^2,

1.
1. Department of Physics, Shaoxing University, Shaoxing 312000, Zhejiang Province, P. R. China;
2. Department of Physics, Zhejiang University, Hangzhou 310027, P. R. China

Received Date: 30 November 2011
Available Online: 13 February 2012
Fund Project: 国家自然科学基金(60506019, 10674118, 10774129)资助项目 (60506019, 10674118, 10774129)

Oxidation and thermal desorption mechanism on the PbTe(111) surface were investigated using X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM), and low-energyelectron diffraction (LEED). The initial cleaning of the surface by 500 VAr⁺ sputtering followed by annealing at 250 °C yielded a perfect (1×1) PbTe(111) surface. XPS measurements showed that PbO₂, PbO, and TeO₂ were present at the PbTe(111) surface after air exposure for 2 days, and the intensity ratio of Te 3d_5/2 and Pb 4f_7/2 increased rapidly compared to that of the clean PbTe(111) surface, indicating Te depletion and Pb enrichment of the surface. XPS and STM measurements showed that the thickness of the oxide layer was more than 2 monolayers (MLs). During thermal treatment, the core levels of PbO₂ and TeO₂ disappeared and the intensity of the O 1s core level decreased, indicating surface decomposition of PbO₂ and TeO₂, and desorption of oxygen, whereas PbO was still present on the surface after annealing at up to 350 °C.
- Surface oxidation,
- Desorption,
- PbTe(111),
- X-ray photoemission spectroscopy,
- Scanning tunneling microscopy
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