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Citation: JIANG Lei, HUANG Hui, WANG Chun-Tao, ZHANG Wen-Kui, GAN Yong-Ping, TAO Xin-Yong. Photoelectrochromic Properties of TiO_2-xN_x/NiO Bilayer Thin Films[J]. Acta Physico-Chimica Sinica, ;2010, 26(02): 299-303. doi: 10.3866/PKU.WHXB20100226 shu

Photoelectrochromic Properties of TiO_2-xN_x/NiO Bilayer Thin Films

1.
College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014, P. R. China; College of Electromechanical Engineering, Zhejiang Ocean University, Zhoushan 316000, Zhejiang Province, P. R. China

Received Date: 17 August 2009
Available Online: 30 December 2009

N-doped TiO2 films were prepared on indium tin oxide(ITO) conducting glass by dc-reactive magnetron sputtering using a Ti target in an O2/N2/Ar mixture gas in combination with heat-treatment at 300-500 ℃. The microstructure, optical and photoelectrochemical properties of the as-formed filmswere characterized byX-ray diffraction (XRD), X-ray photoelectron spectroscopy(XPS), scanning electron microscopy(SEM) and UV-Vis transmittance spectrum. Highly porous NiO was deposited onto the N-doped TiO2 layer by chemical bath deposition to obtain ITO/TiO2-xNx/NiO bilayer thin films and they exhibited excellent and noticeable photoelectrochromism. The TiO2-xNx film annealed at 400 ℃ showed the highest photocurrent response. The color of films changed from colorless to brown and the transmittance varied from 79.0% to 12.6% at 500 nmafter 1 h of irradiation.
- Photoelectrochromism,
- N-doped TiO2,
- NiO,
- Photoelectrochemical property,
- Thin film
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沈阳化工大学材料科学与工程学院沈阳 110142

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Photoelectrochromic Properties of TiO2-xNx/NiO Bilayer Thin Films

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Photoelectrochromic Properties of TiO_2-xN_x/NiO Bilayer Thin Films