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Citation: TANG Xiao-Qing, YU Jun-Sheng, LI Lu, WANG Jun, JIANG Ya-Dong. Polymer Doped High Brightness Phosphorescent Organic Light-Emitting Diodes[J]. Acta Physico-Chimica Sinica, ;2008, 24(06): 1012-1016. doi: 10.3866/PKU.WHXB20080617 shu

Polymer Doped High Brightness Phosphorescent Organic Light-Emitting Diodes

1.
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China

Received Date: 8 November 2007
Available Online: 26 March 2008

Polymer doped organic light-emitting diodes (OLEDs) with the structure of indium-tin oxide (ITO)/poly(N-vinylcarbazole) (PVK):(pbi)2Ir(acac)/2,9-dimethyl-4,7-diphenyl-1,10-phenan throline (BCP)/Mg:Ag were fabricated. The light-emitting layer was processed by doping noble metal iridiumcomplex (pbi)2Ir(acac) into a PVKmatrix with the concentrations of 4%and 5%(w), using spin coating method. Through characterizing the UV-Vis absorption spectrum, photoluminescence (PL) spectrum of the (pbi)2Ir(acac) and the electroluminescence (EL) properties of the devices, the main energy transfer mechanisms from phosphorescent material (pbi)2Ir(acac) to PVK were discussed. The device performance was investigated at different current densities and doping concentrations. The results showed that the devices with above two different doping concentrations have the maximum brightness of 11210 and 9174 cd·m-2 and maximum luminance efficiency of 1.53 and 1.31 lm·W-1, respectively. The EL spectrum and the Commissions Internationale de 1’Eclairage (CIE) coordinates were independent on the variation of bias voltage and the doping concentration, indicating a stable color purity.
- Organic light-emitting diode; Phosphorescence; Iridiumcomplex; Polymer doped; Energy transfer; Direct charge trapping
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1.
沈阳化工大学材料科学与工程学院沈阳 110142

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Polymer Doped High Brightness Phosphorescent Organic Light-Emitting Diodes

南开大学师唯/华北电力大学（保定）刘景维：二维配位聚合物中有序的亲锂冠醚位点用于无枝晶锂沉积

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通讯作者: 陈斌, bchen63@163.com