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Citation: YU Dao, LIU Qian, LIU Qing-Feng. Dielectric and Luminescent Properties of Rare Earth-Doped Ba_0.6Sr_0.4TiO₃ Thin Films[J]. Acta Physico-Chimica Sinica, ;2008, 24(04): 695-699. doi: 10.3866/PKU.WHXB20080426 shu

Dielectric and Luminescent Properties of Rare Earth-Doped Ba_0.6Sr_0.4TiO₃ Thin Films

1.
State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China; Graduate School of the Chinese Academy of Sciences, Beijing 100049, P. R. China

Received Date: 2 November 2007
Available Online: 27 February 2008

Ba0.6Sr0.4TiO3:Re (BST:Re) thin films were synthesized by ion beam sputtering deposition. M (100) and Si(100) substrates were used for different measure requirements. The as-deposited multilayer films were transformed into polycrystalline films after two-step anealling-diffusion at lower temperature and crystallization at higher temperature. The dielectric constants of BST:Re/M (Re=Er, Eu, Pr/Al) samples were determined by a scanning tip microwave near-field microscopy. The results indicated that the dopings of appropriate amount of rare earth ions improved the dielectric constants, where the optimal doping concentratrations of Er3+ and Eu3+ ions were around 4.5% and 5.7%(atom fraction), respectively. The samples co-doped with Pr3+ and Al3+ t an optimum performance under 4-8 of Al/Pr molar ratio. We also investigated the photoluminescence properties of BST:Re/Si (Re=Er, Eu) samples. The luminescent quenching concentrations of Er3+ and Eu3+ ions doped in BST thin films were 4.20% and 8.95% (atom fraction), respectively.
- Bariumstrontiumtitanate; Rare earth-doped; Dielectric; Luminescence; Combinatorial materials chip
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沈阳化工大学材料科学与工程学院沈阳 110142

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Dielectric and Luminescent Properties of Rare Earth-Doped Ba0.6Sr0.4TiO3 Thin Films

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通讯作者: 陈斌, bchen63@163.com

Dielectric and Luminescent Properties of Rare Earth-Doped Ba_0.6Sr_0.4TiO₃ Thin Films