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Citation: LIU Yi-An, XUE Cheng-Shan, ZHUANG Hui-Zhao, ZHANG Xiao-Kai, TIAN De-Heng, WU Yu-Xin, SUN Li-Li, AI Yu-Jie, WANG Fu-Xue. Structure and Synthesis of GaN Powder by Sol-Gel Method[J]. Acta Physico-Chimica Sinica, ;2006, 22(06): 657-660. doi: 10.3866/PKU.WHXB20060603 shu

Structure and Synthesis of GaN Powder by Sol-Gel Method

1.
Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, P. R. China

Received Date: 7 November 2005
Available Online: 31 May 2006

A novel and efficient method was applied to prepare gallium nitride (GaN) powder. Hexa nal gallium nitride (GaN) powder was successfully synthesized by means of a combination of sol-gel process with high temperature ammoniation using Ga(OC2H5)3 as a precursor. Ammoniation of Ga2O3 gel was conducted in the flow of NH3 gas at 950 ℃ for 20 min. Measurement results by XRD, FTIR, TEM, and SAED indicate that the synthesised GaN is of a single-phase hexa nal wurtzite structure, and the granularity of the GaN powder has a od uniformity. In addtion, the FTIR shows a distinct peak broadening.
- Sol-gel method;Ammonition temperature;GaN powder
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