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Citation: Qian Dao-Sun, Zhao Jun. Transient Behavior of n-InP/Fe³⁺, Fe²⁺ Interface Using Small Current Step[J]. Acta Physico-Chimica Sinica, ;1992, 8(02): 202-206. doi: 10.3866/PKU.WHXB19920212 shu

Transient Behavior of n-InP/Fe³⁺, Fe²⁺ Interface Using Small Current Step

Qian Dao-Sun ,
Zhao Jun

1.
Department of Applied Chemistry, Shanghai Jiaotong University, Shanghai 200030

Received Date: 4 October 1990
Available Online: 15 April 1992

In this paper the transient behavior of n-InP semiconductor electrode in Fe~(3+)/Fe~(2+) solution using current step method is studied. From the equivalent circuit of the n-InP electrode under irradiation, a theoretical model for the change of photopoten-tial is derived in the presence of a small signal. The results of the experiments confirm the derivation. On the basis of the experiments and the theoretical model we also develop a method for measuring the capacitance of the space charge layer (C_(sc)). The observation of the influences of various light intensities is studied also.
- Indium phosphide; Semiconducting electrode; Photoelectrochemistry; Transient method
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Transient Behavior of n-InP/Fe³⁺, Fe²⁺ Interface Using Small Current Step