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Citation: Wen-Fa CHEN, Bin-Wen LIU, Xiao-Ming JIANG, Guo-Cong GUO. Synthesis, Crystal Structure and Fluorescent Properties of New Layered Thiophosphate Cs2Ga3PS8[J]. Chinese Journal of Structural Chemistry, ;2021, 40(10): 1271-1276. doi: 10.14102/j.cnki.0254–5861.2011–3135 shu

Synthesis, Crystal Structure and Fluorescent Properties of New Layered Thiophosphate Cs2Ga3PS8

  • a.

    State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China

  • b.

    University of Chinese Academy of Sciences, Beijing 100190, China

  • Corresponding author: Xiao-Ming JIANG, xmjiang@fjirsm.ac.cn Guo-Cong GUO, gcguo@fjirsm.ac.cn
  • Received Date: 5 February 2021
    Accepted Date: 2 April 2021

    Fund Project: the NSF of China 21827813the NSF of China 21921001the NSF of China 22075283Scientific Research Fund of Natural Science Foundation of Fujian Province 2020J01115the Youth Innovation Promotion Association of CAS 20200303

Figures(5)

  • A new quaternary metal thiophosphate, Cs2Ga3PS8, in triclinic P\begin{document}$ \overline 1 $\end{document} space group has been successfully synthesized by a reactive-flux method. Its structural framework is derived from well-known AMIIIMIVQ4 (A = alkali metal; MIII = Al, Ga, In; MIV = Si, Ge, Sn; Q = S, Se) system and composed of two-dimensional 2 ∞[Ga3PS8]2– layers separated by Cs+. The compound exhibits a wide band gap of 3.08 eV and congruent-melting behavior with melt point of 645 ℃. Interestingly, Cs2Ga3PS8 exhibits a broad photoluminescent emission band at 420 nm upon excitation at 295 nm. Moreover, electronic structure calculations indicate that Cs2Ga3PS8 is a direct band gap compound and its luminescent process can be mainly ascribed to electron transfer from the S-3p and Ga-4p states to S-3p and P-3p.
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