Citation: Mingxin LU, Liyang ZHOU, Xiaoyu XU, Xiaoying FENG, Hui WANG, Bin YAN, Jie XU, Chao CHEN, Hui MEI, Feng GAO. Preparation of La-doped lead-based piezoelectric ceramics with both high electrical strain and Curie temperature[J]. Chinese Journal of Inorganic Chemistry, ;2025, 41(2): 329-338. doi: 10.11862/CJIC.20240206 shu

Preparation of La-doped lead-based piezoelectric ceramics with both high electrical strain and Curie temperature

Mingxin LU ¹ ,
Liyang ZHOU ² ,
Xiaoyu XU ¹ ,
Xiaoying FENG ¹ ,
Hui WANG ² ,
Bin YAN ² ,
Jie XU ¹ ,
Chao CHEN ¹ ,
Hui MEI ¹ ,
Feng GAO ^1,,

1.
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
2.
No. 771 Institute, No. 9 Academy, China Aerospace Science and Technology Corporation, Xi'an 710065, China

Corresponding author: Feng GAO, gaofeng@nwpu.edu.cn
Received Date: 2 June 2024
Revised Date: 21 November 2024

Figures(6)

La³⁺-doped 0.28Pb(In_1/2Nb_1/2)O₃-0.32Pb(Zn_1/3Nb_2/3)O₃-0.3PbTiO₃-0.1PbZrO₃ (PIN-PZN-PZT) quaternary piezoelectric ceramics were prepared by the conventional solid-phase method, and the effects of La³⁺ doping on the microstructures and electrical performances of PIN-PZN-PZT quaternary piezoelectric ceramics were investigated. The results show that introducing La³⁺ can enhance the local structural heterogeneity of piezoelectric ceramics, enhancing the dielectric relaxation properties to improve the piezoelectric performance. When the La₂O₃ content was 1.5%, piezoelectric ceramic materials with high electrically induced strain (0.23%) and high Curie temperature (206 ℃) were obtained.
- 0.28Pb(In_1/2Nb_1/2)O₃-0.32Pb(Zn_1/3Nb_2/3)O₃-0.3PbTiO₃-0.1PbZrO₃,
- piezoelectric ceramic,
- electrical strain,
- Curie temperature
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