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Citation: Yu SU, Xinlian FAN, Yao YIN, Lin WANG. From synthesis to application: Development and prospects of InP quantum dots[J]. Chinese Journal of Inorganic Chemistry, ;2024, 40(11): 2105-2123. doi: 10.11862/CJIC.20240126 shu

From synthesis to application: Development and prospects of InP quantum dots

  • Key Laboratory of Flexible Electronics, School of Flexible Electronics (Future Technology), Nanjing Tech University, Nanjing 211816, China

Figures(9)

  • Quantum dot materials have excellent optical properties related to size, such as tunable emission wavelength, narrow full width at half maximum, and wide excitation range, and have a wide range of applications. However, currently, mainstream quantum dots generally contain elements such as cadmium and lead, which is not conducive to the development of commercial products. Indium phosphide (InP) quantum dots have no heavy metal toxicity, and their spectral range can cover the entire visible light region. They have luminescence and optoelectronic properties comparable to cadmium‐based quantum dots and are gradually gaining attention. This article reviews the progress of research in the synthesis methods and applications of InP quantum dots in recent years. Firstly, the advantages and disadvantages of InP quantum dot synthesis methods such as hot injection, heating, crystal nucleus growth, and cation exchange are discussed. Then, the current application achievements of InP quantum dots in fields such as illumination display, photovoltaics, photocatalysis, and optical labeling imaging are highlighted. Finally, the challenges and possible solutions for the development of InP quantum dots are proposed from the perspectives of material synthesis and device applications, to promote the research and application of InP quantum dots and provide new ideas for the development of the optoelectronic field.
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