Citation: CHEN Xiao, LI Yi-Ming, LIU Xiao-Jun, HE Yun-Qiu. Structures and Properties of Sb-Doped ZTO Transparent Conducting Films[J]. Chinese Journal of Inorganic Chemistry, ;2017, 33(3): 435-445. doi: 10.11862/CJIC.2017.039 shu

Structures and Properties of Sb-Doped ZTO Transparent Conducting Films

CHEN Xiao ¹ ,
LI Yi-Ming ¹ ,
LIU Xiao-Jun ¹ ,
HE Yun-Qiu ^1,2,*,,

1.
School of Material Science and Engineering, Tongji University, Shanghai 201804, China
2.
Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Tongji University, Shanghai 201804, China

Corresponding author: HE Yun-Qiu, heyunqiu@tongji.edu.cn
Received Date: 15 September 2016
Revised Date: 21 December 2016

Figures(6)

Sb-doped ZTO (ZnSnO₃) transparent conducting films were synthesized by sol-gel spin-coating method. The structures and properties of Sb-doped ZTO films were characterized by XRD, SEM, XPS, UV-Vis and Hall effect measurements. Three Sb-doping methods, including the substitution of either Zn²⁺ or Sn⁴⁺, or both the two ions in ZnSnO₃ were adopted. The crystalline features, the lattice positions of Sb ion and the ratios of Sb⁵⁺ and Sb³⁺ in Sb-doped ZTO films prepared by different substitution methods were investigated. Followed by a comprehensive comparison of the amount of oxygen vacancy (V_O^··), interstitial zinc (Zn_i^··) and stannous ion (Sn_Sn″), the effects of Sb-doping concentrations on the crystal structure, the defects, and the electrical properties of the films in different methods were detected. Experimental results indicated that the perovskite structure of the ZnSnO₃ crystal has not been disturbed by Sb-doping. Moreover, the Sb ions successfully occupied the corresponding positions of the ZnSnO₃ lattice as expected, with varying molar ratios (n_Sb⁵⁺/n_Sb³⁺) among the methods. That is, the n_Sb⁵⁺/n_Sb³⁺ decreased with the increase of the doping concentration. It has been concluded that the carrier concentrations and mobility were influenced by both the substitution methods and the Sb-doping concentrations, resulting in the variation of the conductivity of the films. Among all films, the Sb_0.15Zn_0.35Sn_0.5O_1.5 film obtained a minimum resistivity of 0.423 Ω·cm. Finally, the transmittance of all the as-prepared films were higher than 78% within the 350~800 nm range being demonstrated.
- Sb-doping,
- ZTO films,
- sol-gel,
- defects,
- transparent,
- conductivity
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