引用本文:
Hong Bo CHEN, Jing Dong LIN, Jun YI, Yun CAI, Guang WEI, Yin Zhong LIN, Dai Wei LIAO. Novel Silicon Nanotubes[J]. Chinese Chemical Letters,
2001, 12(12): 1139-1140.
Citation: Hong Bo CHEN, Jing Dong LIN, Jun YI, Yun CAI, Guang WEI, Yin Zhong LIN, Dai Wei LIAO. Novel Silicon Nanotubes[J]. Chinese Chemical Letters, 2001, 12(12): 1139-1140.
Citation: Hong Bo CHEN, Jing Dong LIN, Jun YI, Yun CAI, Guang WEI, Yin Zhong LIN, Dai Wei LIAO. Novel Silicon Nanotubes[J]. Chinese Chemical Letters, 2001, 12(12): 1139-1140.
Novel Silicon Nanotubes
摘要:
Novel silicon nanotubes with inner-diameter of 60-80 nm was prepared using hydrogen-added dechlorination of SiCl4 followed by chemical vapor deposition (CVD) on a NixMgyO catalyst. The TEM observation showed that the suitable reaction temperature is 973 K for the formation of silicon nanotubes. Most of silicon nanotubes have one open end and some have two closed ends. The shape of nanoscale silicon, however, is a micro-crystal type at 873 K, a rod or needle type at 993 K and an onion-type at 1023 K, respectively.
English
Novel Silicon Nanotubes
Abstract:
Novel silicon nanotubes with inner-diameter of 60-80 nm was prepared using hydrogen-added dechlorination of SiCl4 followed by chemical vapor deposition (CVD) on a NixMgyO catalyst. The TEM observation showed that the suitable reaction temperature is 973 K for the formation of silicon nanotubes. Most of silicon nanotubes have one open end and some have two closed ends. The shape of nanoscale silicon, however, is a micro-crystal type at 873 K, a rod or needle type at 993 K and an onion-type at 1023 K, respectively.
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Key words:
- Silicon nanotubes
- / chemical vapor deposition
- / chemical etching
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