引用本文:
Yuan LIN, Rui Feng LIN, Xiao Wen Zhou, Jing Bo Zhang, Xu Rui Xiao. Scanning Tunneling Microscopic and Scanning Tunneling Spectroscopic Studies of Nanocrystalline CdSe Thin Film[J]. Chinese Chemical Letters,
1997, 8(9): 831-832.
Citation: Yuan LIN, Rui Feng LIN, Xiao Wen Zhou, Jing Bo Zhang, Xu Rui Xiao. Scanning Tunneling Microscopic and Scanning Tunneling Spectroscopic Studies of Nanocrystalline CdSe Thin Film[J]. Chinese Chemical Letters, 1997, 8(9): 831-832.
Citation: Yuan LIN, Rui Feng LIN, Xiao Wen Zhou, Jing Bo Zhang, Xu Rui Xiao. Scanning Tunneling Microscopic and Scanning Tunneling Spectroscopic Studies of Nanocrystalline CdSe Thin Film[J]. Chinese Chemical Letters, 1997, 8(9): 831-832.
Scanning Tunneling Microscopic and Scanning Tunneling Spectroscopic Studies of Nanocrystalline CdSe Thin Film
摘要:
Nanocrystalline CdSe thin film prepared by chemical solution deposition was imaged in air with a scanning tunneling microscope (STM).Scanning tunneling current spectroscopy(STS) was taken at a fixed tip-sample separation.Tunneling current (i)-voltage(v) curve and differential conductance spectrum show an n-type schottky rectifying behaviour and yield a direct measure of band gap energy.An increase of bandgap energy (1.8-2.1eV) was measured indicating energy quantization of this particular thin film.
English
Scanning Tunneling Microscopic and Scanning Tunneling Spectroscopic Studies of Nanocrystalline CdSe Thin Film
Abstract:
Nanocrystalline CdSe thin film prepared by chemical solution deposition was imaged in air with a scanning tunneling microscope (STM).Scanning tunneling current spectroscopy(STS) was taken at a fixed tip-sample separation.Tunneling current (i)-voltage(v) curve and differential conductance spectrum show an n-type schottky rectifying behaviour and yield a direct measure of band gap energy.An increase of bandgap energy (1.8-2.1eV) was measured indicating energy quantization of this particular thin film.
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