基于CH3NH3PbI3单晶的Ta2O5顶栅双极性场效应晶体管

引用本文: 吕乾睿, 李晶, 廉志鹏, 赵昊岩, 董桂芳, 李强, 王立铎, 严清峰. 基于CH₃NH₃PbI₃单晶的Ta₂O₅顶栅双极性场效应晶体管[J]. 物理化学学报, 2017, 33(1): 249-254. doi: 10.3866/PKU.WHXB201610142 shu

Citation: LÜ Qian-Rui, LI Jing, LIAN Zhi-Peng, ZHAO Hao-Yan, DONG Gui-Fang, LI Qiang, WANG Li-Duo, YAN Qing-Feng. CH₃NH₃PbI₃ Single Crystal-Based Ambipolar Field-Effect Transistor with Ta₂O₅ as the Top Gate Dielectric[J]. Acta Physico-Chimica Sinica, 2017, 33(1): 249-254. doi: 10.3866/PKU.WHXB201610142 shu

基于CH₃NH₃PbI₃单晶的Ta₂O₅顶栅双极性场效应晶体管

清华大学化学系, 北京 100084
基金项目:
国家自然科学基金（51173097，91333109），国家重点基础研究发展规划项目（2013CB632900），清华大学自主科研项目（20131089202，20161080165）和低维量子物理国家重点实验室开放基金（KF201516）资助

摘要: 具有无机-有机杂化钙钛矿结构的CH₃NH₃PbI₃通常偏向于显示n型半导体特性，本文以五氧化二钽（Ta₂O₅）作为绝缘层，制备了基于钙钛矿CH₃NH₃PbI₃单晶的顶栅结构场效应晶体管，暗态下更明显地观察到了CH₃NH₃PbI₃所具有的p型场效应特性，空穴场效应迁移率达到8.7×10^-5 cm²·V^-1·s^-1，此暗态空穴迁移率比原有报道的基于CH₃NH₃PbI₃多晶薄膜的SiO₂底栅场效应晶体管提高了一个数量级。此外，光照对CH₃NH₃PbI₃单晶场效应晶体管的性能有强烈影响。与底栅结构CH₃NH₃PbI₃多晶场效应晶体管不同，即使有栅极和绝缘层的遮挡，5.00 mW·cm^-2的光照仍可使CH₃NH₃PbI₃单晶场效应晶体管的空穴电流提高一个数量级（V_GS（栅源电压）=V_DS（漏源电压）=20 V），光响应度达到2.5 A·W^-1。本文工作实现了对CH₃NH₃PbI₃场效应晶体管载流子传输的选择性调控，表明在没有外部因素的参与下，通过合适的器件设计，CH₃NH₃PbI₃同样具有制备成双极性晶体管的潜力。

关键词:

English

CH₃NH₃PbI₃ Single Crystal-Based Ambipolar Field-Effect Transistor with Ta₂O₅ as the Top Gate Dielectric

Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China
Received Date: 22 August 2016
Revised Date: 14 October 2016
Fund Project:
The project was supported by the National Natural Science Foundation of China (51173097, 91333109), National Key Basic Research Program of China (2013CB632900), Tsinghua University Initiative Scientific Research Program, China (20131089202, 20161080165), and Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics, China (KF201516).

Abstract: Organic-inorganic hybrid perovskite methylammonium lead iodide (CH₃NH₃PbI₃) generally tends to show n-type semiconductor properties. In this work, a field-effect transistor (FET) device based on a CH₃NH₃PbI₃ single crystal with tantalum pentoxide (Ta₂O₅) as the top gate dielectric was fabricated. The p-type field-effect transport properties of the device were observed in the dark. The hole mobility of the device extracted from transfer characteristics in the dark was 8.7×10^-5 cm²·V^-1·s^-1, which is one order of magnitude higher than that of polycrystalline FETs with SiO₂ as the bottom gate dielectric. In addition, the effect of light illumination on the CH₃NH₃PbI₃ single-crystal FET was studied. Light illumination strongly influenced the field effect of the device because of the intense photoelectric response of the CH₃NH₃PbI₃ single crystal. Different from a CH₃NH₃PbI₃ polycrystalline FET with a bottom gate dielectric, even with the top gate dielectric shielding, light illumination of 5.00 mW·cm^-2 caused the hole current to increase by one order of magnitude compared with that in the dark (V_GS (gate-source voltage)=V_DS (drain-source voltage)=20 V) and the photoresponsivity reached 2.5 A·W^-1. The introduction of Ta₂O₅ as the top gate dielectric selectively enhanced hole transport in the single-crystal FET, indicating that in the absence of external factors, by appropriate device design, CH₃NH₃PbI₃ also has potential for use in ambipolar transistors.

Key words:

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沈阳化工大学材料科学与工程学院沈阳 110142

基于CH₃NH₃PbI₃单晶的Ta₂O₅顶栅双极性场效应晶体管

English

CH₃NH₃PbI₃ Single Crystal-Based Ambipolar Field-Effect Transistor with Ta₂O₅ as the Top Gate Dielectric

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