引用本文:
何捍卫, 胡岳华, 周科朝, 徐竞. 金属的化学-机械抛光技术研究进展[J]. 应用化学,
2003, 20(5): 415-419.
Citation: HE Han-Wei, HU Yue-Hua, ZHOU Ke-Chao, XU Jin. Recent Advancement of Chemical-Mechanical Polishing Technology of Metal[J]. Chinese Journal of Applied Chemistry, 2003, 20(5): 415-419.
Citation: HE Han-Wei, HU Yue-Hua, ZHOU Ke-Chao, XU Jin. Recent Advancement of Chemical-Mechanical Polishing Technology of Metal[J]. Chinese Journal of Applied Chemistry, 2003, 20(5): 415-419.
金属的化学-机械抛光技术研究进展
English
Recent Advancement of Chemical-Mechanical Polishing Technology of Metal
Abstract:
Recent researches on chemical-mechanical polishing (CMP) technology are reviewed,which include the advancements of CMP experimental methods,the characterization of the polishing effectiveness,the developments of CMP equipments and expendables.The troubles occurred in CMP technology are analyzed and some suggestions are proposed.It is concluded that establishment of a quantitative CMP rate equation is one of the key points in carring out the in-situ terminal checkout.
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Key words:
- metal
- / chemical-mechanical polishing
- / review
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