Sb,Bi,Zr,Si元素微量掺杂对荧光粉YAG：Ce发光性能的影响

引用本文: 孙夏微, 谭劲, 李聪明, 雷婷, 孟小康, 鄢维, 张玮, 冯珊. Sb,Bi,Zr,Si元素微量掺杂对荧光粉YAG：Ce发光性能的影响[J]. 无机化学学报, 2013, 29(9): 1863-1869. doi: 10.3969/j.issn.1001-4861.2013.00.241 shu

Citation: SUN Xia-Wei, TAN Jin, LI Cong-Ming, LEI Ting, MENG Xiao-Kang, YAN Wei, ZHANG Wei, FENG Shan. Doping Effects of Sb, Bi, Zr and Si on the Properties of YAG：Ce Phosphor[J]. Chinese Journal of Inorganic Chemistry, 2013, 29(9): 1863-1869. doi: 10.3969/j.issn.1001-4861.2013.00.241 shu

Sb,Bi,Zr,Si元素微量掺杂对荧光粉YAG：Ce发光性能的影响

孙夏微 ^1, ,
谭劲 ^1,2, ,
李聪明 ^1, ,
雷婷 ^1, ,
孟小康 ^1, ,
鄢维 ^1, ,
张玮 ^1, ,
冯珊 ^1,

基金项目:
国家自然科学基金(No.40643018)资助项目。 (No.40643018)

摘要: 采用高温固相法分别合成了Sb³⁺,Bi³⁺,Zr⁴⁺,Si⁴⁺共掺杂的YAG:Ce黄色荧光粉。研究了YAG:Ce黄色荧光粉的发光强度随元素种类以及微量掺杂浓度的变化情况及相关机理。结果显示,随着元素Sb³⁺,Bi³⁺,Zr⁴⁺,Si⁴⁺掺杂浓度的增加,发射峰强度均表现出先增大后减小的趋势。Sb³⁺,Bi³⁺与Ce³⁺之间存在多极子相互作用和辐射再吸收的能量传递及晶格修复作用,当Sb³⁺,Bi³⁺掺杂浓度分别为0.5和0.1 mmol时发射峰强度达到最大值,分别提高了35.5%和44.8%。在YAG:Ce中由于Zr⁴⁺,Si⁴⁺的电荷补偿作用,促进Ce⁴⁺→Ce³⁺的转化,从而提高了YAG:Ce的发光强度。Zr⁴⁺,Si⁴⁺掺杂浓度分别在0.3和7 mmol时达到最大值,分别提高了27.4%和31.2%。由荧光粉颗粒形貌可知,Sb³⁺,Bi³⁺,Zr⁴⁺,Si⁴⁺元素的微量掺杂能促使晶粒长大,并且近似球型,导致发光强度有明显的提高。

关键词:

YAG：Ce;荧光粉;共掺杂;能量传递;晶格缺陷

English

Doping Effects of Sb, Bi, Zr and Si on the Properties of YAG：Ce Phosphor

1.
1 Faculty of Material Science and Chemistry, China University of Geosciences, Wuhan 430074, China;
Received Date: 29 January 2013
Fund Project:
国家自然科学基金(No.40643018)资助项目。

Abstract: The Sb³⁺, Bi³⁺, Zr⁴⁺ and Si⁴⁺ doped YAG:Ce yellow phosphors were synthesized by high temperature solid-state method. The doping effect and the related mechanism of Sb³⁺, Bi³⁺, Zr⁴⁺ and Si⁴⁺ on the luminescence intensity of YAG:Ce were studied. The results show that the luminescence intensity firstly increases with the increases of the Sb³⁺, Bi³⁺, Zr⁴⁺ and Si⁴⁺ concentration, then decreases. The energy transfer from Sb³⁺ and Bi³⁺ to Ce³⁺ took the mechanism of the multipolar interactions, which leads the improvements of the emission intensity about 35.5% at 0.5 mmol for Sb³⁺ and 44.8% at 0.1 mmol for Bi³⁺, respectively. The additions of Zr⁴⁺ and Si⁴⁺ promote further reduction of Ce⁴⁺ to Ce³⁺, owing to spontaneous charge compensation. The highest emission intensity is obtained at the concentrations of Zr⁴⁺ and Si⁴⁺ of 0.3 mmol and 7 mmol, which is increased by 27.4% and 31.2%, respectively. With the doping of Sb³⁺, Bi³⁺, Zr⁴⁺ and Si⁴⁺ elements, the growth of phosphor particle is improved, resulting in the enhancement of phosphors emission.

Key words:

YAG：Ce;phosphors;Co-deped;energy transmission;oxygen vacancy

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沈阳化工大学材料科学与工程学院沈阳 110142

Sb,Bi,Zr,Si元素微量掺杂对荧光粉YAG：Ce发光性能的影响

English

Doping Effects of Sb, Bi, Zr and Si on the Properties of YAG：Ce Phosphor

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中国化学会秘书处

Sb,Bi,Zr,Si元素微量掺杂对荧光粉YAG：Ce发光性能的影响

English

Doping Effects of Sb, Bi, Zr and Si on the Properties of YAG：Ce Phosphor

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