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Ag-Ag2Se共敏化ZnO花-棒异质结构的合成及其光电化学特性

韩志钟 ,  韦力瑗 ,  郭晔 ,  潘海波 ,  陈建中 ,  陈耐生

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引用本文: 韩志钟, 韦力瑗, 郭晔, 潘海波, 陈建中, 陈耐生. Ag-Ag2Se共敏化ZnO花-棒异质结构的合成及其光电化学特性[J]. 无机化学学报, 2013, 29(9): 1856-1862. doi: 10.3969/j.issn.1001-4861.2013.00.247 shu
Citation:  HAN Zhi-Zhong, WEI Li-Yuan, GUO Ye, PAN Hai-Bo, CHEN Jian-Zhong, CHEM Nai-Sheng. Synthesis and Photovoltaic Charateristics of Ag-Ag2Se Sensitized ZnO Flower-Rod Heterostructures[J]. Chinese Journal of Inorganic Chemistry, 2013, 29(9): 1856-1862. doi: 10.3969/j.issn.1001-4861.2013.00.247 shu

Ag-Ag2Se共敏化ZnO花-棒异质结构的合成及其光电化学特性

  • 基金项目:

    国家自然科学基金(No.91022025,51072036,21201035) (No.91022025,51072036,21201035)

    福建省自然基金(No.2012J01204)资助项目。 (No.2012J01204)

摘要: 采用水相法合成ZnO花-棒(ZFRs)有序阵列结构,同时利用离子交换法,制备Ag和Ag2Se量子点共敏化光ZnO光阳极(AA-ZFRs)。通过扫描电子显微镜(SEM)、X射线粉末衍射(XRD)、X射线能量色散谱(EDS)和透射电子显微镜(TEM)等手段对样品进行了分析和表征,并测试其光电化学特性以及量子效应。结果表明,Ag-Ag2Se共敏化ZnO花-棒三维有序结构对太阳光的吸收范围延展至近红外区(750 nm),并且在敏化层与ZnO基质界面形成异质结,有效的抑制光生电子-空穴对复合,增强光转换量子效应,从而提高光电化学性能,开路电压达到-0.77 V,短路电流为0.64 mA。

English

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  • 收稿日期:  2013-01-15
  • 网络出版日期:  2013-03-18
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