新形金纳米片的简单制备与生长机制

引用本文: 王长顺, 阚彩侠, 倪媛, 徐海英. 新形金纳米片的简单制备与生长机制[J]. 物理化学学报, 2014, 30(1): 194-204. doi: 10.3866/PKU.WHXB201311053 shu

Citation: WANG Chang-Shun, KAN Cai-Xia, NI Yuan, XU Hai-Ying. Facile Preparation and Growth Mechanism of New-Type ld Nanoplates[J]. Acta Physico-Chimica Sinica, 2014, 30(1): 194-204. doi: 10.3866/PKU.WHXB201311053 shu

新形金纳米片的简单制备与生长机制

基金项目:
南京航空航天大学基本科研项目(NZ2013204)资助 (NZ2013204)

摘要:

在室温(~30 ℃)条件下，氯金酸(HAuCl₄)均匀混合在粘稠的表面活性剂聚乙烯吡咯烷酮(PVP)胶体(水为溶剂)中，HAuCl₄可以被PVP还原，从而形成纳米片. 本工作中，通过调整晶体生长条件，成功合成了大量新形貌的单晶金纳米片(厚度数十纳米，尺寸为数个微米). 例如，在晶体生长初期阶段，通过引入温度变化(如降温10-20 ℃)，形成的金纳米片主要是六角星形，并伴有盾状、内凹外凸的三角状、截角的、三叉的及多台阶等新形纳米片. 结合理论计算，阐明了金纳米片的生长机制：在一定条件下，金(111)晶面不仅可以沿着<110>方向生长成为常规的三角或六角纳米片，还可以沿<211>、<321>等不同方向生长成含有更高指数侧面的新形金纳米片.

关键词:

English

Facile Preparation and Growth Mechanism of New-Type ld Nanoplates

1.
1 Department of Applied Physics, College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, P. R. China;
2 Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, P. R. China
Received Date: 23 August 2013
Available Online: 01 January 2014
Fund Project:
南京航空航天大学基本科研项目(NZ2013204)资助

Abstract:

When a sticky gel consisting of an aqueous HAuCl₄ solution mixed with poly-vinylpyrrolidone (PVP) surfactant is kept at room temperature (about 30 ℃), the HAuCl₄ is reduced by the PVP, resulting in the formation of nanostructures. In this study, ld nanoplates with new shapes, which were single crystalline, several micrometers wide, and tens of nanometers thick, were mass-synthesized by adjusting the crystal growth conditions. For example, through inducing temperature decrease (10-20 ℃) in the early stage of crystal growth, the product is dominated by star-like ld nanoplates, together with other new shapes such as shields, concave and convex triangles, corner snipped shapes, triple branched shapes, and shapes that are step-rich in the side plane. Based on theoretical calculations, we present the growth mechanism of these new ld nanoplates. Under certain growth conditions, the (111) plane of the ld crystal can grow not only along the <110> direction into regular triangular or hexa nal nanoplates, but also along other directions such as <211> and <321>, to give new nanoplates with high-index side facets.

Key words:

1. [1]
  
  (1) Lal, S.; Link, S.; Halas, N. J. Nat. Photonics 2007, 1, 641.doi: 10.1038/nphoton.2007.223
  (1) Lal, S.; Link, S.; Halas, N. J. Nat. Photonics 2007, 1, 641.doi: 10.1038/nphoton.2007.223
2. [2]
  (2) De, M.; Ghosh, P. S.; Rotello, V. M. Adv. Mater. 2008, 20,4225. doi: 10.1002/adma.v20:22(2) De, M.; Ghosh, P. S.; Rotello, V. M. Adv. Mater. 2008, 20,4225. doi: 10.1002/adma.v20:22
3. [3]
  (3) Zijlstra, P.; Chon, J.W.; Gu, M. Nature 2009, 459, 410.doi: 10.1038/nature08053(3) Zijlstra, P.; Chon, J.W.; Gu, M. Nature 2009, 459, 410.doi: 10.1038/nature08053
4. [4]
  (4) Vigderman, L.; Khanal, B. P.; Zubarev, E. R. Adv. Mater. 2012,24, 4811. doi: 10.1002/adma.201201690(4) Vigderman, L.; Khanal, B. P.; Zubarev, E. R. Adv. Mater. 2012,24, 4811. doi: 10.1002/adma.201201690
5. [5]
  (5) Liu, X.W.;Wang, D. S.; Li, Y. D. Nano Today 2012, 7, 448.doi: 10.1016/j.nantod.2012.08.003(5) Liu, X.W.;Wang, D. S.; Li, Y. D. Nano Today 2012, 7, 448.doi: 10.1016/j.nantod.2012.08.003
6. [6]
  (6) ng, J. X.; Li, G. D.; Tang, Z. Y. Nano Today 2012, 7, 564.doi: 10.1016/j.nantod.2012.10.008(6) ng, J. X.; Li, G. D.; Tang, Z. Y. Nano Today 2012, 7, 564.doi: 10.1016/j.nantod.2012.10.008
7. [7]
  (7) Dykman, L.; Khlebtsov, N. Chem. Soc. Rev. 2012, 41, 2256.doi: 10.1039/c1cs15166e(7) Dykman, L.; Khlebtsov, N. Chem. Soc. Rev. 2012, 41, 2256.doi: 10.1039/c1cs15166e
8. [8]
  (8) Rycenga, M.; Cobley, C. M.; Zeng, J.; Li,W. Y.; Moran, C. H.;Zhang, Q.; Qin, D.; Xia, Y. N. Chem. Rev. 2011, 111, 3669. doi: 10.1021/cr100275d(8) Rycenga, M.; Cobley, C. M.; Zeng, J.; Li,W. Y.; Moran, C. H.;Zhang, Q.; Qin, D.; Xia, Y. N. Chem. Rev. 2011, 111, 3669. doi: 10.1021/cr100275d
9. [9]
  (9) Dreaden, E. C.; Alkilany, A. M.; Huang, X. H.; Murphy, C. J.;El-Sayed, M. A. Chem. Soc. Rev. 2012, 41, 2740. doi: 10.1039/c1cs15237h(9) Dreaden, E. C.; Alkilany, A. M.; Huang, X. H.; Murphy, C. J.;El-Sayed, M. A. Chem. Soc. Rev. 2012, 41, 2740. doi: 10.1039/c1cs15237h
10. [10]
  (10) Li, Z.; Zhang, S.; Halas, N. J.; Nordlander, P.; Xu, H. Small2011, 7, 593. doi: 10.1002/smll.v7.5(10) Li, Z.; Zhang, S.; Halas, N. J.; Nordlander, P.; Xu, H. Small2011, 7, 593. doi: 10.1002/smll.v7.5
11. [11]
  (11) Auguie, B.; Barnes,W. L. Phys. Rev. Lett. 2008, 101, 143902.doi: 10.1103/PhysRevLett.101.143902(11) Auguie, B.; Barnes,W. L. Phys. Rev. Lett. 2008, 101, 143902.doi: 10.1103/PhysRevLett.101.143902
12. [12]
  (12) Naumov, I. I.; Li, Z. Y.; Bratkovsky, A. M. Appl. Phys. Lett.2010, 96, 033105. doi: 10.1063/1.3273859(12) Naumov, I. I.; Li, Z. Y.; Bratkovsky, A. M. Appl. Phys. Lett.2010, 96, 033105. doi: 10.1063/1.3273859
13. [13]
  (13) Ray, P. C. Chem. Rev. 2010, 110, 5332. doi: 10.1021/cr900335q(13) Ray, P. C. Chem. Rev. 2010, 110, 5332. doi: 10.1021/cr900335q
14. [14]
  (14) Ming, T.; Zhao, L.; Xiao, M. D.;Wang, J. F. Small 2010, 6,2514. doi: 10.1002/smll.201000920(14) Ming, T.; Zhao, L.; Xiao, M. D.;Wang, J. F. Small 2010, 6,2514. doi: 10.1002/smll.201000920
15. [15]
  (15) Yu, Y. Y.; Chang, S. S.; Lee, C. L.;Wang, C. R. C. J. Phys. Chem. B 1997, 101, 6661. doi: 10.1021/jp971656q(15) Yu, Y. Y.; Chang, S. S.; Lee, C. L.;Wang, C. R. C. J. Phys. Chem. B 1997, 101, 6661. doi: 10.1021/jp971656q
16. [16]
  (16) Link, S.; Mohamed, M. B.; El-Sayed, M. A. J. Phys. Chem. B1999, 103, 3073.(16) Link, S.; Mohamed, M. B.; El-Sayed, M. A. J. Phys. Chem. B1999, 103, 3073.
17. [17]
  (17) van der Zande, B. M. I.; Bohmer, M. R.; Fokkink, L. G. J.;Schonenberger, C. Langmuir 2000, 16, 451. doi: 10.1021/la9900425(17) van der Zande, B. M. I.; Bohmer, M. R.; Fokkink, L. G. J.;Schonenberger, C. Langmuir 2000, 16, 451. doi: 10.1021/la9900425
18. [18]
  (18) Jana, N. R.; Gearheart, L.; Murphy, C. J. J. Phys. Chem. B 2001,105, 4065.(18) Jana, N. R.; Gearheart, L.; Murphy, C. J. J. Phys. Chem. B 2001,105, 4065.
19. [19]
  (19) Busbee, B. D.; Obare, S. O.; Murphy, C. J. Adv. Mater. 2003, 15,414. doi: 10.1002/adma.200390095(19) Busbee, B. D.; Obare, S. O.; Murphy, C. J. Adv. Mater. 2003, 15,414. doi: 10.1002/adma.200390095
20. [20]
  (20) Sun, Y. G.; Xia, Y. N. Adv. Mater. 2002, 14, 833. doi: 10.1002/1521-4095(20020605)14:11<833::AID-ADMA833>3.0.CO;2-K(20) Sun, Y. G.; Xia, Y. N. Adv. Mater. 2002, 14, 833. doi: 10.1002/1521-4095(20020605)14:11<833::AID-ADMA833>3.0.CO;2-K
21. [21]
  (21) Chen, S. H.; Carroll, D. L. Nano Lett. 2002, 2, 1003. doi: 10.1021/nl025674h(21) Chen, S. H.; Carroll, D. L. Nano Lett. 2002, 2, 1003. doi: 10.1021/nl025674h
22. [22]
  (22) Sun, Y. G.; Mayers, B.; Xia, Y. N. Nano Lett. 2003, 3, 675.doi: 10.1021/nl034140t(22) Sun, Y. G.; Mayers, B.; Xia, Y. N. Nano Lett. 2003, 3, 675.doi: 10.1021/nl034140t
23. [23]
  (23) Okada, N.; Hamanaka, Y.; Nakamura, A.; Pastoriza-Santos, I.;Liz-Marzan, L. M. J. Phys. Chem. B 2004, 108, 8751. doi: 10.1021/jp048193q(23) Okada, N.; Hamanaka, Y.; Nakamura, A.; Pastoriza-Santos, I.;Liz-Marzan, L. M. J. Phys. Chem. B 2004, 108, 8751. doi: 10.1021/jp048193q
24. [24]
  (24) Kan, C. X.; Zhu, X. G.;Wang, G. H. J. Phys. Chem. B 2006,110, 4651. doi: 10.1021/jp054800d(24) Kan, C. X.; Zhu, X. G.;Wang, G. H. J. Phys. Chem. B 2006,110, 4651. doi: 10.1021/jp054800d
25. [25]
  (25) Li, C. C.; Sato, R.; Kanehara, M.; Zeng, H. B.; Bando, Y.;Teranishi, T. Angew. Chem. Int. Edit. 2009, 48, 6883.doi: 10.1002/anie.v48:37(25) Li, C. C.; Sato, R.; Kanehara, M.; Zeng, H. B.; Bando, Y.;Teranishi, T. Angew. Chem. Int. Edit. 2009, 48, 6883.doi: 10.1002/anie.v48:37
26. [26]
  (26) Sau, T. K.; Rogach, A. L. Adv. Mater. 2010, 22, 1781. doi: 10.1002/adma.v22:16(26) Sau, T. K.; Rogach, A. L. Adv. Mater. 2010, 22, 1781. doi: 10.1002/adma.v22:16
27. [27]
  (27) Chen, A. Q.; Deprince, A. E., III; Demortiere, A.; Joshi-Imre,A.; Shevchenko, E. V.; Gray, S. K.;Welp, U.; Vlasko-Vlasov, V.K. Small 2011, 7, 2365. doi: 10.1002/smll.v7.16(27) Chen, A. Q.; Deprince, A. E., III; Demortiere, A.; Joshi-Imre,A.; Shevchenko, E. V.; Gray, S. K.;Welp, U.; Vlasko-Vlasov, V.K. Small 2011, 7, 2365. doi: 10.1002/smll.v7.16
28. [28]
  (28) Tao, A. R.; Habas, S.; Yang, P. D. Small 2008, 4, 310.(28) Tao, A. R.; Habas, S.; Yang, P. D. Small 2008, 4, 310.
29. [29]
  (29) Tian, N.; Zhou, Z. Y.; Sun, S. G.; Ding, Y.;Wang, Z. L. Science2007, 316, 732. doi: 10.1126/science.1140484(29) Tian, N.; Zhou, Z. Y.; Sun, S. G.; Ding, Y.;Wang, Z. L. Science2007, 316, 732. doi: 10.1126/science.1140484
30. [30]
  (30) Xia, Y. N.; Xiong, Y. J.; Lim, B.; Skrabalak, S. E. Angew. Chem. Int. Edit. 2009, 48, 60. doi: 10.1002/anie.200802248(30) Xia, Y. N.; Xiong, Y. J.; Lim, B.; Skrabalak, S. E. Angew. Chem. Int. Edit. 2009, 48, 60. doi: 10.1002/anie.200802248
31. [31]
  (31) Homan, K. A.; Chen, J.; Schiano, A.; Mohamed, M.;Willets, K.A.; Murugesan, S.; Stevenson, K. J.; Emelianov, S. Adv. Funct. Mater. 2011, 21, 1673. doi: 10.1002/adfm.201001556(31) Homan, K. A.; Chen, J.; Schiano, A.; Mohamed, M.;Willets, K.A.; Murugesan, S.; Stevenson, K. J.; Emelianov, S. Adv. Funct. Mater. 2011, 21, 1673. doi: 10.1002/adfm.201001556
32. [32]
  (32) Kan, C. X.;Wang, C. S.; Li, H. C.; Qi, J. S.; Zhu, J. J.; Li, Z. S.;Shi, D. N. Small 2010, 6, 1768. doi: 10.1002/smll.201000600(32) Kan, C. X.;Wang, C. S.; Li, H. C.; Qi, J. S.; Zhu, J. J.; Li, Z. S.;Shi, D. N. Small 2010, 6, 1768. doi: 10.1002/smll.201000600
33. [33]
  (33) Xia, Y. N.; Xia, X. H.;Wang, Y.; Xie, S. F. MRS Bull. 2013, 38,335. doi: 10.1557/mrs.2013.84(33) Xia, Y. N.; Xia, X. H.;Wang, Y.; Xie, S. F. MRS Bull. 2013, 38,335. doi: 10.1557/mrs.2013.84
34. [34]
  (34) Morriss, R. H.; Bottoms,W. R.; Peacock, R. J. J. Appl. Phys.1968, 39, 3016. doi: 10.1063/1.1656724(34) Morriss, R. H.; Bottoms,W. R.; Peacock, R. J. J. Appl. Phys.1968, 39, 3016. doi: 10.1063/1.1656724
35. [35]
  (35) Kan, C. X.;Wang, C. S.; Zhu, J. J.; Li, H. C. J. Solid State Chem. 2010, 183, 858. doi: 10.1016/j.jssc.2010.01.021(35) Kan, C. X.;Wang, C. S.; Zhu, J. J.; Li, H. C. J. Solid State Chem. 2010, 183, 858. doi: 10.1016/j.jssc.2010.01.021
36. [36]
  (36) Washio, I.; Xiong, Y. J.; Yin, Y. D.; Xia, Y. N. Adv. Mater. 2006,18, 1745.(36) Washio, I.; Xiong, Y. J.; Yin, Y. D.; Xia, Y. N. Adv. Mater. 2006,18, 1745.
37. [37]
  (37) Courty, A.; Henry, A. I.; ubet, N.; Pileni, M. P. Nat. Mater.2007, 6, 900. doi: 10.1038/nmat2004(37) Courty, A.; Henry, A. I.; ubet, N.; Pileni, M. P. Nat. Mater.2007, 6, 900. doi: 10.1038/nmat2004
38. [38]
  (38) Radha, B.; Kulkarni, G. U. Crystal Growth & Design 2011, 11,320. doi: 10.1021/cg1015548(38) Radha, B.; Kulkarni, G. U. Crystal Growth & Design 2011, 11,320. doi: 10.1021/cg1015548
39. [39]
  (39) Jin, R. C.; Cao, Y. C.; Hao, E.; Metraux, G. S.; Schatz, G. C.;Mirkin, C. A. Nature 2003, 425, 487. doi: 10.1038/nature02020(39) Jin, R. C.; Cao, Y. C.; Hao, E.; Metraux, G. S.; Schatz, G. C.;Mirkin, C. A. Nature 2003, 425, 487. doi: 10.1038/nature02020
40. [40]
  (40) Li, C. C.; Cai,W. P.; Cao, B. Q.; Sun, F. Q.; Li, Y.; Kan, C. X.;Zhang, L. D. Adv. Funct. Mater. 2006, 16, 83.(40) Li, C. C.; Cai,W. P.; Cao, B. Q.; Sun, F. Q.; Li, Y.; Kan, C. X.;Zhang, L. D. Adv. Funct. Mater. 2006, 16, 83.
41. [41]
  (41) Yao, L. Z. Foundation of Crystal Growth; University of Scienceand Technology of China Press: Hefei, 1995; pp 258-310, 409-429. [姚连增. 晶体生长基础. 合肥: 中国科学技术大学出版社, 1995: 258-310; 409-429.](41) Yao, L. Z. Foundation of Crystal Growth; University of Scienceand Technology of China Press: Hefei, 1995; pp 258-310, 409-429. [姚连增. 晶体生长基础. 合肥: 中国科学技术大学出版社, 1995: 258-310; 409-429.]
42. [42]
  (42) Kan, C. X.; Cai,W. P.; Li, C. C.; Zhang, L. D. J. Mater. Res.2004, 20, 320.(42) Kan, C. X.; Cai,W. P.; Li, C. C.; Zhang, L. D. J. Mater. Res.2004, 20, 320.
43. [43]
  (43) Kamat, P. V. J. Phys. Chem. B 2002, 106, 7729. doi: 10.1021/jp0209289(43) Kamat, P. V. J. Phys. Chem. B 2002, 106, 7729. doi: 10.1021/jp0209289
44. [44]
  (44) Wiley, B.; Sun, Y. G.; Chen, J. Y.; Cang, H.; Li, Z. Y.; Li, X. D.;Xia, Y. N. MRS Bull. 2005, 30, 356. doi: 10.1557/mrs2005.98(44) Wiley, B.; Sun, Y. G.; Chen, J. Y.; Cang, H.; Li, Z. Y.; Li, X. D.;Xia, Y. N. MRS Bull. 2005, 30, 356. doi: 10.1557/mrs2005.98
45. [45]
  (45) Germain, V.; Li, J.; Ingert, D.;Wang, Z. L.; Pileni, M. P. J. Phys. Chem. B 2003, 107, 8717. doi: 10.1021/jp0303826(45) Germain, V.; Li, J.; Ingert, D.;Wang, Z. L.; Pileni, M. P. J. Phys. Chem. B 2003, 107, 8717. doi: 10.1021/jp0303826
46. [46]
  (46) Aherne, D.; Ledwith, D. M.; Gara, M.; Kelly, J. M. Adv. Funct. Mater. 2008, 18, 2005. doi: 10.1002/adfm.v18:14(46) Aherne, D.; Ledwith, D. M.; Gara, M.; Kelly, J. M. Adv. Funct. Mater. 2008, 18, 2005. doi: 10.1002/adfm.v18:14
47. [47]
  (47) Duan, J. Y.; Zhang, Q. X.;Wang, Y. L.; Guan, J. G. Acta Phys. - Chim. Sin. 2009, 25, 1405. [段君元, 章桥新, 王一龙, 官建国.物理化学学报, 2009, 25, 1405.] doi: 10.3866/PKU.WHXB20090731(47) Duan, J. Y.; Zhang, Q. X.;Wang, Y. L.; Guan, J. G. Acta Phys. - Chim. Sin. 2009, 25, 1405. [段君元, 章桥新, 王一龙, 官建国.物理化学学报, 2009, 25, 1405.] doi: 10.3866/PKU.WHXB20090731
48. [48]
  (48) Wang, Z. L. J. Phys. Chem. B 2000, 104, 1153. doi: 10.1021/jp993593c(48) Wang, Z. L. J. Phys. Chem. B 2000, 104, 1153. doi: 10.1021/jp993593c
49. [49]
  (49) Xue, C.; Metraux, G. S.; Millstone, J. E.; Mirkin, C. A. J. Am. Chem. Soc. 2008, 130, 8337. doi: 10.1021/ja8005258(49) Xue, C.; Metraux, G. S.; Millstone, J. E.; Mirkin, C. A. J. Am. Chem. Soc. 2008, 130, 8337. doi: 10.1021/ja8005258
50. [50]
  (50) Xiong, Y. J.;Washio, I.; Chen, J. Y.; Cai, H. G.; Li, Z. Y.; Xia, Y.N. Langmuir 2006, 22, 8563. doi: 10.1021/la061323x(50) Xiong, Y. J.;Washio, I.; Chen, J. Y.; Cai, H. G.; Li, Z. Y.; Xia, Y.N. Langmuir 2006, 22, 8563. doi: 10.1021/la061323x
51. [51]
  (51) Nam, H. S.; Hwang, N. M.; Yu, B. D.; Yoon, J. K. Phys. Rev. Lett. 2002, 89, 275502. doi: 10.1103/PhysRevLett.89.275502(51) Nam, H. S.; Hwang, N. M.; Yu, B. D.; Yoon, J. K. Phys. Rev. Lett. 2002, 89, 275502. doi: 10.1103/PhysRevLett.89.275502
52. [52]
  (52) Cao, Y. L.; Ding, X. L.; Li, H. C.; Yi, Z. G.;Wang, X. F.; Zhu, J.J.; Kan, C. X. Acta Phys. -Chim. Sin. 2011, 27, 1273. [曹艳丽,丁孝龙, 李红臣, 伊兆广, 王祥夫, 朱杰君, 阚彩侠. 物理化学学报, 2011, 27, 1273.] doi: 10.3866/PKU.WHXB20110604(52) Cao, Y. L.; Ding, X. L.; Li, H. C.; Yi, Z. G.;Wang, X. F.; Zhu, J.J.; Kan, C. X. Acta Phys. -Chim. Sin. 2011, 27, 1273. [曹艳丽,丁孝龙, 李红臣, 伊兆广, 王祥夫, 朱杰君, 阚彩侠. 物理化学学报, 2011, 27, 1273.] doi: 10.3866/PKU.WHXB20110604
53. [53]
  (53) Hoppe, C. E.; Lazzari, M.; Pardinas-Blanco, I.; Lopez-Quintela,M. A. Langmuir 2006, 22, 7027. doi: 10.1021/la060885d(53) Hoppe, C. E.; Lazzari, M.; Pardinas-Blanco, I.; Lopez-Quintela,M. A. Langmuir 2006, 22, 7027. doi: 10.1021/la060885d
54. [54]
  (54) Wang, C. S.; Kan, C. X.; Zhu, J. J.; Zeng, X. L.;Wang, X. F.; Li,H. C.; Shi, D. N. Journal of Nanomaterials 2010, 969030.(54) Wang, C. S.; Kan, C. X.; Zhu, J. J.; Zeng, X. L.;Wang, X. F.; Li,H. C.; Shi, D. N. Journal of Nanomaterials 2010, 969030.
55. [55]
  (55) Delley, B. J. Chem. Phys. 2000, 113, 7756. doi: 10.1063/1.1316015
  (55) Delley, B. J. Chem. Phys. 2000, 113, 7756. doi: 10.1063/1.1316015

扫一扫看文章

计量

PDF下载量: 965
文章访问数: 2082
HTML全文浏览量: 150

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

新形金纳米片的简单制备与生长机制

English

Facile Preparation and Growth Mechanism of New-Type ld Nanoplates

CCS Chemistry：嵌段共聚物自组装成 “三明治”二维有机材料，实现纳米级压力传感功能

CCS Chemistry：颜徐州、鲍哲南：你的皮肤可能是一片SPMs

CCS Chemistry：工作高效不疲劳，只须让催化剂动起来

CCS Chemistry：静电组装导向聚合- 聚电解质纳米凝胶量化制备新策略

CCS Chemistry：金黄色葡萄球菌醛基脱氢酶是如何识别特异性底物的？

计量

通讯作者: 陈斌, bchen63@163.com

中国化学会秘书处

新形金纳米片的简单制备与生长机制

English

Facile Preparation and Growth Mechanism of New-Type ld Nanoplates

CCS Chemistry：嵌段共聚物自组装成 “三明治”二维有机材料，实现纳米级压力传感功能

CCS Chemistry：颜徐州、鲍哲南： 你的皮肤可能是一片SPMs

CCS Chemistry：工作高效不疲劳，只须让催化剂动起来

CCS Chemistry：静电组装导向聚合- 聚电解质纳米凝胶量化制备新策略

CCS Chemistry：金黄色葡萄球菌醛基脱氢酶是如何识别特异性底物的？

计量

文章相关

通讯作者: 陈斌, bchen63@163.com

中国化学会秘书处

CCS Chemistry：颜徐州、鲍哲南：你的皮肤可能是一片SPMs