Citation: NING De-Zheng, ZHOU De-Feng, XIA Yan-Jie, ZHAO Gui-Chun, MENG Jian. Structure and Electrical Properties of M -Doped Ce0.9Sm0.1O2-δ Based Solid Electrolytes[J]. Acta Physico-Chimica Sinica, 2010, 26(05): 1202-1206. doi: 10.3866/PKU.WHXB20100509
M 掺杂Ce0.9Sm0.1O2-δ固体电解质的结构和电性能
采用溶胶-凝胶法合成SiO2含量为5.0×10-4 (w)的Ce0.9Sm0.1O2-δ(SDC)粉体(SDCSi), 并将0-3.0%(x)M 分别加入到SDCSi陶瓷粉体中, 用X射线衍射(XRD)和场发射扫描电子显微镜(FE-SEM)对材料进行表征, 用交流阻抗谱(AC)测试材料的电性能. 结果表明: M 掺杂能使SDCSi的烧结温度降低100-200 ℃, 提高陶瓷材料的致密度; 清除或降低陶瓷材料晶界处SiO2杂质的有害影响, 显著提高晶粒/晶界电导率和总电率; M 掺杂到SDCSi具有烧结助剂和晶界杂质清除剂的双重作用.
English
Structure and Electrical Properties of M -Doped Ce0.9Sm0.1O2-δ Based Solid Electrolytes
The precursor powder of Ce0.9Sm0.1O2-δ(SDC) containing 5.0×10-4 (w) SiO2 as an impurity (SDCSi) was prepared by the sol-gelmethod and 0-3.0%(molar fraction, x)M was added to the SDCSi powder. The characterizations focused on phase structure, sintering behavior, relative density, electrical conductivity of all the samples were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and AC impedance spectroscopy. We find that M can reduce the sintering temperature about 100-200 ℃ and increase the relative density of the ceramics. The grain boundary conduction increased markedly for the 1.0%(x) M -loaded SDCSi ceramics as M can mitigate the harmful effects of the SiO2 impurity. These investigations have indicated that M is shown to be an effective sintering aid and a new scavenger of the grain boundary synchronously.
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Key words:
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Solid electrolyte
- / M -doping
- / Scavenger
- / Electrical conductivity
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