引用本文:
雷晓钧, 陈海峰, 刘忠范. DEA(TCNQ)2与TEA(TCNQ)2单晶上的STM热化学烧孔性能比较[J]. 物理化学学报,
2001, 17(09): 769-772.
doi:
10.3866/PKU.WHXB20010901
Citation: Lei Xiao-Jun, Chen Hai-Feng, Liu Zhong-Fan. Comparative about the STM Thermochemical Hole Burning of DEA(TCNQ)2 and TEA(TCNQ)2[J]. Acta Physico-Chimica Sinica, 2001, 17(09): 769-772. doi: 10.3866/PKU.WHXB20010901
Citation: Lei Xiao-Jun, Chen Hai-Feng, Liu Zhong-Fan. Comparative about the STM Thermochemical Hole Burning of DEA(TCNQ)2 and TEA(TCNQ)2[J]. Acta Physico-Chimica Sinica, 2001, 17(09): 769-772. doi: 10.3866/PKU.WHXB20010901
DEA(TCNQ)2与TEA(TCNQ)2单晶上的STM热化学烧孔性能比较
摘要:
利用STM隧道电流焦耳热诱导分解气化的热化学烧孔方法，对两种存储材料DEA(TCNQ)2和TEA(TCNQ)2的存储性能作了比较,DEA(TCNQ)2可以得到更高的存储密度、更大的信息孔深/孔径比,有更大的写入阈值电压.由此说明通过对存储材料的设计可以对存储系统的性能进行优化.
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关键词:
- STM;信息存储;热化学烧孔;存储材料
English
Comparative about the STM Thermochemical Hole Burning of DEA(TCNQ)2 and TEA(TCNQ)2
Abstract:
The thermochemical hole burning properties of two different charge transfer complexes,DEA(TCNQ)2 and TEA(TCNQ)2,were studied in this work.It shows that the data writing on DEA(TCNQ)2 needs a larger threshold voltage compared with TEA(TCNQ)2,and that the DEA(TCNQ)2 gives a smaller hole size and a higher depth/diameter ratio,demonstrating the possibility of optimizing the storage performance with a suitable molecular design.
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