引用本文:
杨咏来, 徐恒泳, 李文钊. Ni基催化剂上CH4、C2H6和C2H4的裂解积炭性能[J]. 物理化学学报,
2001, 17(09): 773-775.
doi:
10.3866/PKU.WHXB20010902
Citation: Yang Yong-Lai, Xu Heng-Yong, Li Wen-Zhao. Study on Carbon Deposition of CH4,C2H6 and C2H4 Cracking over Ni-based Catalysts[J]. Acta Physico-Chimica Sinica, 2001, 17(09): 773-775. doi: 10.3866/PKU.WHXB20010902
Citation: Yang Yong-Lai, Xu Heng-Yong, Li Wen-Zhao. Study on Carbon Deposition of CH4,C2H6 and C2H4 Cracking over Ni-based Catalysts[J]. Acta Physico-Chimica Sinica, 2001, 17(09): 773-775. doi: 10.3866/PKU.WHXB20010902
Ni基催化剂上CH4、C2H6和C2H4的裂解积炭性能
摘要:
采用脉冲微反技术研究了添加半导体氧化物对Ni基催化剂上CH4、C2H6和C2H4的裂解积炭反应特性的影响。结果表明，n型半导体CeO2的添加降低了CH4和C2H6的积炭活性，而p型半导体Co3O4的添加则加速CH4和C2H6的裂解积炭；而对于与CH4和C2H6活化机制不同的C2H4分子的活化，上述影响机制正好相反，n型半导体CeO2的添加促进C2H4的裂解积炭反应，而p型半导体Co3O4的添加则抑制C2H4的裂解积炭反应。XPS分析表明，活性金属Ni与半导体氧化物之间存在的金属半导体相互作用是这种影响机制的主要因素。
English
Study on Carbon Deposition of CH4,C2H6 and C2H4 Cracking over Ni-based Catalysts
Abstract:
Influence of the additions of different type semiconductor oxides to Nibased catalyst on the characteristics of carbon deposition of CH4,C2H6 and C2H4 cracking was studied by using pulse microreaction technique.It was discovered that,the addition of ntype semiconductor CeO2 to Ni catalyst would decrease carbon deposition activity of CH4 and C2H6 cracking,whereas the addition of ptype semiconductor Co3O4 would increase carbon deposition activity of CH4 and C2H6 cracking.On the other hand,the effect of semiconductor oxide additives on the characteristics of carbon deposition of C2H4 cracking is opposite to that of CH4 and C2H6 due to the different activated mechanism.XPS results reveal that there is a metalsemiconductor interaction (MScI) between active metal Ni and semiconductor oxide,which is the most important factor leads to the above phenomenon.
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