引用本文:
戴振文, 刘波, 潘守甫. 金刚石(111)面上乙炔生长金刚石薄膜的机理[J]. 物理化学学报,
1997, 13(10): 904-907.
doi:
10.3866/PKU.WHXB19971008
Citation: Dai Zhen-Wen, Liu Bo, Pan Shou-Fu. Growth Mechanisms of Diamond(111) Surface from Acetylene[J]. Acta Physico-Chimica Sinica, 1997, 13(10): 904-907. doi: 10.3866/PKU.WHXB19971008
Citation: Dai Zhen-Wen, Liu Bo, Pan Shou-Fu. Growth Mechanisms of Diamond(111) Surface from Acetylene[J]. Acta Physico-Chimica Sinica, 1997, 13(10): 904-907. doi: 10.3866/PKU.WHXB19971008
金刚石(111)面上乙炔生长金刚石薄膜的机理
English
Growth Mechanisms of Diamond(111) Surface from Acetylene
Abstract:
The AM1 semi-empirical quantum mechanical method has been used to calculate the mechanisms for growth of diamond (111) hydrogenated surface by using acetylene molecule as growth species. The enthalpy of formation (ΔfH) of each step in the growth reaction pathway are obtained. The results show that acetylene can greatly contribute to the growth of diamond and that acetylene is an effective diamond growth species.
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Key words:
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Diamond thin film
- / Acetylene
- / Growth emchanism
- / Potential barrier
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