引用本文:
李经建, 刁鹏, 蔡生民, 侯永田, 王昕, 张树霖. 化学氧化对多孔硅表面态和光致发光的影响[J]. 物理化学学报,
1994, 10(08): 737-740.
doi:
10.3866/PKU.WHXB19940814
Citation: Li Jing-Jian, Diao Peng, Cai Sheng-Min, Hou Yong-Tian, Wang Xin, Zhang Shu-Lin. The Influence of Chmical Oxidation on Surface State and Photoluminescence of Porous Silicon[J]. Acta Physico-Chimica Sinica, 1994, 10(08): 737-740. doi: 10.3866/PKU.WHXB19940814
Citation: Li Jing-Jian, Diao Peng, Cai Sheng-Min, Hou Yong-Tian, Wang Xin, Zhang Shu-Lin. The Influence of Chmical Oxidation on Surface State and Photoluminescence of Porous Silicon[J]. Acta Physico-Chimica Sinica, 1994, 10(08): 737-740. doi: 10.3866/PKU.WHXB19940814
English
The Influence of Chmical Oxidation on Surface State and Photoluminescence of Porous Silicon
Abstract:
The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were examined. With the increase of oxidizing duration, the relative amount of the Si-H2 surface species on PS decreases even though the photoluminescence intensity increases. the result suggests that it isn't SiH2 but Si-O and Si-O-Si on the interface of PS play a key role in enhancing the photoluminescence. A complete photoluminescence mechanism should consider the influence of surface state of porous silicon based on the quantum confinement effect model.
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