引用本文:
李澄, 李国铮, 王士勋, 徐国宪. 用半导体高-低结概念对氧化银(Ⅱ)阴极过程所作的一种新解释[J]. 物理化学学报,
1985, 1(05): 455-459.
doi:
10.3866/PKU.WHXB19850509
Citation: Li Cheng, Li Guozheng, Wang Shixun, Xu Guoxian. A NEW EXPLANATION TO THE CATHODIC PROCESS OF SILVER(Ⅱ) OXIDE WITH THE CONCEPT OF SEMICONDUCTOR HIGH-LOW JUNCTION[J]. Acta Physico-Chimica Sinica, 1985, 1(05): 455-459. doi: 10.3866/PKU.WHXB19850509
Citation: Li Cheng, Li Guozheng, Wang Shixun, Xu Guoxian. A NEW EXPLANATION TO THE CATHODIC PROCESS OF SILVER(Ⅱ) OXIDE WITH THE CONCEPT OF SEMICONDUCTOR HIGH-LOW JUNCTION[J]. Acta Physico-Chimica Sinica, 1985, 1(05): 455-459. doi: 10.3866/PKU.WHXB19850509
用半导体高-低结概念对氧化银(Ⅱ)阴极过程所作的一种新解释
摘要:
在半导体中, 由于掺杂水平的不同, 在同种导电类型的半导体之间会形成一种被称为高-低结的势垒, 也会象p-n结一样表现出一定程度的整流特性。由于这一势垒的存在, 半导体中载流子的运动受到一个附加电场的作用, 它们的运动规律与没有高-低结时相比有所不同, 因此造成这种半导体电性质比较特殊。如带有高-低结的p~+/p-Si光阴极具有良好的光电转换性能~[1], 效率较高。在一些电极反应过程中, 由于反应中间物质的形成也会构成一定程度的高-低结。本文首次将半导体固结的概念引入电化学, 研究了A 电极的放电过程。用高-低结机理满意地解释了一些现行理论所不能解释的现象。
English
A NEW EXPLANATION TO THE CATHODIC PROCESS OF SILVER(Ⅱ) OXIDE WITH THE CONCEPT OF SEMICONDUCTOR HIGH-LOW JUNCTION
Abstract:
The concept of semiconductor solid junction was first introduced into the tra ditional electrochemistry. The cathodic process of A electrode was discussed. Some of the phenomena were explained quite satisfactoryly with a new mechanism based on the semiconductor high-low junction, these phenomena can not be explai ned by ordinary theories.
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