引用本文:
Feng YIN, Xue Ping LI, Zhen Zong ZHANG, Tie Feng CHEN, Xu Rui XIAO. Investigation of HNO3 Chemincally Oxidized Porous Silicon[J]. Chinese Chemical Letters,
1996, 7(11): 1037-1038.
Citation: Feng YIN, Xue Ping LI, Zhen Zong ZHANG, Tie Feng CHEN, Xu Rui XIAO. Investigation of HNO3 Chemincally Oxidized Porous Silicon[J]. Chinese Chemical Letters, 1996, 7(11): 1037-1038.
Citation: Feng YIN, Xue Ping LI, Zhen Zong ZHANG, Tie Feng CHEN, Xu Rui XIAO. Investigation of HNO3 Chemincally Oxidized Porous Silicon[J]. Chinese Chemical Letters, 1996, 7(11): 1037-1038.
Investigation of HNO3 Chemincally Oxidized Porous Silicon
摘要:
The stability of the photoluminescence(PL)from porous silicon(PS)has evidently improved by HNO3 chemical oxidation.The PL intensity and peak wavelength of PS were changed with the increase of HNO3 concentration and oxidation time.Being different from other oxidized ways,the PS oxidized by HNO3 remains sensitive to adsorbates.PTIR spectroscopic data suggest that these phenomena are attributed to the presence of HSi(SiaO3-a)(a≤3)layer on PS surface.
English
Investigation of HNO3 Chemincally Oxidized Porous Silicon
Abstract:
The stability of the photoluminescence(PL)from porous silicon(PS)has evidently improved by HNO3 chemical oxidation.The PL intensity and peak wavelength of PS were changed with the increase of HNO3 concentration and oxidation time.Being different from other oxidized ways,the PS oxidized by HNO3 remains sensitive to adsorbates.PTIR spectroscopic data suggest that these phenomena are attributed to the presence of HSi(SiaO3-a)(a≤3)layer on PS surface.
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