引用本文:
刘冰, 姚素薇, 郭鹤桐, 袁华堂, 张允什. 半导体硅上电沉积Ni-Pd-P薄膜及其结构[J]. 应用化学,
1999, 16(1): 16-20.
Citation: Liu Bing, Yao Suwei, Guo Hetong, Yuan Huatang, Zhang Yunshi. Ni-Pd-P Film Electrodeposited on Semiconductor Silicon and Its Structure[J]. Chinese Journal of Applied Chemistry, 1999, 16(1): 16-20.
Citation: Liu Bing, Yao Suwei, Guo Hetong, Yuan Huatang, Zhang Yunshi. Ni-Pd-P Film Electrodeposited on Semiconductor Silicon and Its Structure[J]. Chinese Journal of Applied Chemistry, 1999, 16(1): 16-20.
半导体硅上电沉积Ni-Pd-P薄膜及其结构
摘要:
采用控电位的沉积方式在半导体硅上制备出Ni-Pd-P薄膜,结果表明镀液中H3PO3含量的增加对P、Ni的析出有促进作用,对Pd的析出有抑制作用.随pH值的升高,镍含量不断升高,Pd、P含量不断下降.P含量对薄膜内应力有很大影响,含P质量分数为1.49%的Ni-Pd-P镀层表面上有许多裂缝,当P含量增加到2.61%时,镀层表面的裂缝已基本消失,继续增加P含量到3.50%时,裂缝完全消失.Ni-Pd-P镀层的结构与其组成密切相关,P含量小于2.00%的Ni-Pd-P镀层形成的是面心立方结构的固溶体.P含量大于4.00%的薄膜为非晶态结构.
English
Ni-Pd-P Film Electrodeposited on Semiconductor Silicon and Its Structure
Abstract:
Ni-Pd-P film was formed on semiconductor silicon by potential controlled electrodeposition technique. Results showed that addition of H3PO3 improved the deposition of Ni and P. With increase of pH of the plating solution, the content of Ni was increased and the Pd and P contents were decreased. The composition of P had a great effect on the inter stress of the film. Many cracks were found on the surface of the film containing 1.49% P, but they disappeared entirely when the P content was 3.50%. Deposit containing lower than 2% P was a solid solution with fcc structure. The structure changed from crystal to amorphous when P content was higher than 4%.
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Key words:
- semico nductor silicon
- / NiPd-P film
- / electrodeposition
- / structure
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